Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

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SHAPE EVOLUTION IN ONE-DIMENSIONAL ZnO NANOSTRUCTURES GROWN FROM ZnO NANOPOWDER SOURCE: VAPOR–LIQUID–SOLID VERSUS VAPOR–SOLID GROWTH MECHANISMS

International Journal of Nanoscience ◽

10.1142/s0219581x11007429 ◽

2011 ◽

Vol 10 (01n02) ◽

pp. 75-79 ◽

Cited By ~ 2

Author(s):

SOUMEN DHARA ◽

P. K. GIRI

Keyword(s):

Growth Mechanism ◽

Growth Temperature ◽

Shape Evolution ◽

Zno Nanostructures ◽

Growth Mechanisms ◽

Vapor Liquid Solid ◽

One Dimensional ◽

Zno Nanopowder ◽

Simultaneous Growth ◽

Vapor Liquid

Here we report on the growth and evolution of ZnO nanowires grown from ZnO nanopowder as a source material using a horizontal muffle furnace. The shape evolution has been studied with variation in growth temperature and zinc vapor pressure. The structural analysis on these nanostructures shows c-axis oriented aligned growth. Scanning electron microscopy imaging of these nanostructures revealed the shape evolution from nanowires to nanoribbons and then to nanorods as the growth temperature increases from 650°C to 870°C. At 650°C, only vertical nanowires have been observed and with increase in growth temperature nanowires transform to nanoribbons and then to nanorods at 870°C. And we also observed simultaneous growth of nanorods and nanoribbons under a specific growth condition. We believe that these nanowires and nanorods were formed by vapor–liquid–solid growth mechanism (catalyst-mediated growth), whereas nanoribbons were grown by vapor–solid growth mechanism (without the aid of a metal catalyst). We observed simultaneous occurrence of vapor–liquid–solid and vapor–solid growth mechanisms at a particular growth temperature. These ZnO nanowires exhibit bound exciton related UV emission at ~379 nm, and defect-emission band in the visible region. Possible growth mechanism, shape evolution, and simultaneous growth of two types of one-dimensional ZnO nanostructures under the same growth condition are discussed.

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Liquid phase growth of bulk GaSe crystal implemented with the temperature difference method under controlled vapor pressure

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.05.027 ◽

2013 ◽

Vol 380 ◽

pp. 18-22 ◽

Cited By ~ 13

Author(s):

Takahide Onai ◽

Yuki Nagai ◽

Hikari Dezaki ◽

Yutaka Oyama

Keyword(s):

Liquid Phase ◽

Vapor Pressure ◽

Temperature Difference ◽

Difference Method ◽

Phase Growth ◽

Liquid Phase Growth

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Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Journal of Electronic Materials ◽

10.1007/s11664-014-3578-3 ◽

2014 ◽

Vol 44 (6) ◽

pp. 1870-1875 ◽

Cited By ~ 6

Author(s):

Hiroyuki Kitagawa ◽

Tsukasa Matsuura ◽

Toshihito Kato ◽

Kin-ya Kamata

Keyword(s):

Liquid Phase ◽

Thermoelectric Properties ◽

Phase Growth ◽

Liquid Phase Growth

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Laser-activated gold catalysts for liquid-phase growth of cadmium selenide nanowires

Chemical Communications ◽

10.1039/c4cc09276g ◽

2015 ◽

Vol 51 (11) ◽

pp. 2145-2148 ◽

Cited By ~ 4

Author(s):

C. Huang ◽

J. Mao ◽

X. M. Chen ◽

J. Yang ◽

X. W. Du

Keyword(s):

Liquid Phase ◽

Liquid Medium ◽

Cadmium Selenide ◽

Room Temperature ◽

Gold Catalysts ◽

Device Fabrication ◽

Phase Growth ◽

Liquid Phase Growth ◽

Cdse Nanowires ◽

Cadmium Selenide Nanowires

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.

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Confined Liquid-Phase Growth of Crystalline Compound Semiconductors on Any Substrate

ACS Nano ◽

10.1021/acsnano.8b01819 ◽

2018 ◽

Vol 12 (6) ◽

pp. 5158-5167 ◽

Cited By ~ 10

Author(s):

Debarghya Sarkar ◽

Wei Wang ◽

Matthew Mecklenburg ◽

Andrew J. Clough ◽

Matthew Yeung ◽

...

Keyword(s):

Liquid Phase ◽

Compound Semiconductors ◽

Crystalline Compound ◽

Phase Growth ◽

Liquid Phase Growth

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A Crucibleless Liquid Phase Growth Method of Preparing the Y‐Ba‐Cu‐0 Superconducting Films

MRS Proceedings ◽

10.1557/proc-169-727 ◽

1989 ◽

Vol 169 ◽

Author(s):

K.C. Chen ◽

L.H. Perng ◽

C.H. Lin ◽

T.P. Perng ◽

T.B. Wu ◽

...

Keyword(s):

Liquid Phase ◽

Buffer Layer ◽

Melting Temperature ◽

Superconducting Films ◽

Superconducting Transition ◽

Phase Growth ◽

Initial Weight ◽

Growth Method ◽

Liquid Phase Growth

AbstractSuperconducting Y‐Ba‐Cu‐0 film can be prepared by a liquid phase growth method without crucible on 96 % and 99 % alumina substrates. A buffer layer of sputtered gold or platinum was necessary for the formation of Yba2Cu3Ox phase. The flux of Ba2Cu3O10. was appropriate for this purpose. For a film of 10 mm x 20 mm x 10 micron, 0.6 to 0.8 gm initial weight was optimal, the optimum melting temperature was 1090 to 1110 °C for 20 ‐ 30 minutes. In order to obtain films with superconducting transition, an additional Y2BaCuO5‐underlayer was necessary. The resultant optimal films had Tc‐onset of above 80 % and Tc ‐zero of typically around 60 K.

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