A Crucibleless Liquid Phase Growth Method of Preparing the Y‐Ba‐Cu‐0 Superconducting Films

1989 ◽  
Vol 169 ◽  
Author(s):  
K.C. Chen ◽  
L.H. Perng ◽  
C.H. Lin ◽  
T.P. Perng ◽  
T.B. Wu ◽  
...  

AbstractSuperconducting Y‐Ba‐Cu‐0 film can be prepared by a liquid phase growth method without crucible on 96 % and 99 % alumina substrates. A buffer layer of sputtered gold or platinum was necessary for the formation of Yba2Cu3Ox phase. The flux of Ba2Cu3O10. was appropriate for this purpose. For a film of 10 mm x 20 mm x 10 micron, 0.6 to 0.8 gm initial weight was optimal, the optimum melting temperature was 1090 to 1110 °C for 20 ‐ 30 minutes. In order to obtain films with superconducting transition, an additional Y2BaCuO5‐underlayer was necessary. The resultant optimal films had Tc‐onset of above 80 % and Tc ‐zero of typically around 60 K.

2014 ◽  
Vol 44 (6) ◽  
pp. 1870-1875 ◽  
Author(s):  
Hiroyuki Kitagawa ◽  
Tsukasa Matsuura ◽  
Toshihito Kato ◽  
Kin-ya Kamata

2015 ◽  
Vol 51 (11) ◽  
pp. 2145-2148 ◽  
Author(s):  
C. Huang ◽  
J. Mao ◽  
X. M. Chen ◽  
J. Yang ◽  
X. W. Du

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.


2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.


ACS Nano ◽  
2018 ◽  
Vol 12 (6) ◽  
pp. 5158-5167 ◽  
Author(s):  
Debarghya Sarkar ◽  
Wei Wang ◽  
Matthew Mecklenburg ◽  
Andrew J. Clough ◽  
Matthew Yeung ◽  
...  

2003 ◽  
Vol 49 (4) ◽  
pp. 309-313 ◽  
Author(s):  
H. Kitagawa ◽  
T. Nagamori ◽  
T. Tatsuta ◽  
T. Kitamura ◽  
Y. Shinohara ◽  
...  

1999 ◽  
Vol 146 (4) ◽  
pp. 1565-1569 ◽  
Author(s):  
M. Syväjärvi ◽  
R. Yakimova ◽  
E. Janzén

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