Особенности зарождения и роста нитевидных нанокристаллов InGaN на подложках SiC/Si методом хлорид-гидридной эпитаксии

The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000C). On substrates with orientations (110) and (111), the formation of InGaN nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations.

Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS)

The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.

Multi-step atomic mechanism of platinum nanocrystals nucleation and growth revealed by in-situ liquid cell STEM

The understanding of crystal growth mechanisms has broadened substantially. One significant advancement is based in the conception that the interaction between particles plays an important role in the growth of nanomaterials. This is in contrast to the classical model, which neglects this process. Direct imaging of such processes at atomic-level in liquid-phase is essential for establishing new theoretical models that encompass the full complexity of realistic scenarios and eventually allow for tailoring nanoparticle growth. Here, we investigate at atomic-scale the exact growth mechanisms of platinum nanocrystals from single atom to final crystals by in-situ liquid phase scanning transmission electron microscopy. We show that, after nucleation, the nanocrystals grow via two main stages: atomic attachment in the first stage, where the particles initially grow by attachment of the atoms until depletion of the surrounding zone. Thereafter, follows the second stage of growth, which is based on particle attachment by different atomic pathways to finally form mature nanoparticles. The atomic mechanisms underlying these growth pathways are distinctly different and have different driving forces and kinetics as evidenced by our experimental observations.