The Structure of GaAs Grown by Chemical Beam Epitaxy on Low-Temperature Cleaned Silicon
Keyword(s):
ABSTRACTChemical beam epitaxy (CBE) has been used to grow GaAs on silicon with a low defect density after etching in HF followed by a low temperature (600°C) in situ heat treatment. High resolution electron microscopy (HREM) and convergent beam electron diffraction (CBED) studies show the presence of 90° and 60° dislocations and some inversion domains.
1997 ◽
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1981 ◽
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pp. 723-728
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