Characterization of Defect Structures by Perturbed Angular Correlation Technique

ABSTRACTIn applications of the perturbed angular correlation (PAC) technique to the characterization of defect structures in materials conclusions are drawn from the local electric field gradient measured at the site of a radioactive probe atom. In metals, PAC has been very successful in labeling and identifying simple probe atom-defect pairs. Based on these results, new experiments were performed on defect structures in cold-worked samples, on the dynamics of He-defect interactions and on the growth of vacancy clusters. Recent results on interactions between the acceptor atom In and different donor atoms or intrinsic defects in Si indicate that PAC may provide atomistic information also in the case of semiconductor materials.