Clamped Ferroelectric and Magnetic Domain Walls and their Application to Memory Engineering

MRS Proceedings ◽

10.1557/proc-834-j6.4 ◽

2004 ◽

Vol 834 ◽

Author(s):

Eiichi Hanamura ◽

Yukito Tanabe

Keyword(s):

Domain Walls ◽

Second Harmonic ◽

Domain Boundary ◽

Magnetic Domain ◽

Earth Metal ◽

Weak Ferromagnetism ◽

Interference Effects ◽

Magnetic Anisotropy Energy ◽

Domain Structures ◽

Magnetic Domain Walls

ABSTRACTA family of rare-earth metal manganites are antiferromagnetic (AFM) ferroelectrics and some of these may show also weak ferromagnetism. First we will show how to observe the ferroelectric (FEL) and AFM domain structures by the interference effects of second harmonic generation (SHG). Second, the observed clamping of the AFM domain wall (DW) to the FEL domain boundary (DB) is intuitively explained by the group theoretical consideration of the magnetic anisotropy energy depending upon the sign of the FEL polarization. Third, the application of these clamped DW-DB to the memory engineering will be briefly discussed.

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Mutual control of coherent spin waves and magnetic domain walls in a magnonic device

Science ◽

10.1126/science.aau2610 ◽

2019 ◽

Vol 366 (6469) ◽

pp. 1121-1125 ◽

Cited By ~ 22

Author(s):

Jiahao Han ◽

Pengxiang Zhang ◽

Justin T. Hou ◽

Saima A. Siddiqui ◽

Luqiao Liu

Keyword(s):

Spin Wave ◽

Domain Walls ◽

Spin Waves ◽

Spin Current ◽

Magnetic Domain ◽

Spin Transfer Torque ◽

Successful Implementation ◽

Domain Structures ◽

Magnetic Domain Walls ◽

Coherent Spin

The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures.

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Temperature Dependence of Magnetic Domains and Wall Structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009573x ◽

1972 ◽

Vol 30 ◽

pp. 496-497

Author(s):

Sonoko Tsukahara ◽

Tadami Taoka ◽

Hisao Nishizawa

Keyword(s):

Temperature Dependence ◽

Domain Walls ◽

Magnetic Domain ◽

Iron Film ◽

Objective Lens ◽

Lorentz Microscopy ◽

Domain Structures ◽

Wall Structures ◽

Crystal Films ◽

Metallurgical Structure

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.

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