Correlative imaging of ferroelectric domain walls

The wealth of properties in functional materials at the nanoscale has attracted tremendous interest over the last decades, spurring the development of ever more precise and ingenious characterization techniques. In ferroelectrics, for instance, scanning probe microscopy based techniques have been used in conjunction with advanced optical methods to probe the structure and properties of nanoscale domain walls, revealing complex behaviours such as chirality, electronic conduction or localised modulation of mechanical response. However, due to the different nature of the characterization methods, only limited and indirect correlation has been achieved between them, even when the same spatial areas were probed. Here, we propose a fast and unbiased analysis method for heterogeneous spatial data sets, enabling quantitative correlative multi-technique studies of functional materials. The method, based on a combination of data stacking, distortion correction, and machine learning, enables a precise mesoscale analysis. When applied to a data set containing scanning probe microscopy piezoresponse and second harmonic generation polarimetry measurements, our workflow reveals behaviours that could not be seen by usual manual analysis, and the origin of which is only explainable by using the quantitative correlation between the two data sets.

In-situ twistable bilayer graphene

The electrical and optical properties of twisted bilayer graphene (tBLG) depend sensitively on the twist angle. To study the angle dependent properties of the tBLG, currently it is required fabrication of a large number of samples with systematically varied twist angles. Here, we demonstrate the construction of in-situ twistable bilayer graphene, in which the twist angle of the two graphene monolayers can be in-situ tuned continuously in a large range with high precision. The controlled tuning of the twist angle is confirmed by a combination of real-space and spectroscopic characterizations, including atomic force microscopy (AFM) identification of crystal lattice orientation, scanning near-field optical microscopy (SNOM) imaging of superlattice domain walls, and resonant Raman spectroscopy of the largely enhanced G-mode. The developed in-situ twistable homostructure devices enable systematic investigation of the twist angle effects in a single device, thus could largely advance the research of twistronics.

Радиопоглощающие и радиоэкранирующие характеристики феррит-полимерных композитов Mn-Zn феррит/П (ТФЭ-ВДФ)

The article discusses the electromagnetic absorbing and shielding properties of ferrite-polymer composites of the composition Mn-Zn ferrite/fluoroplast-42, obtained by pressing a mixture of powders with heating. The measurement of the complex magnetic and dielectric permittivity spectra, as well as the reflection coefficient spectra was carried out in the frequency range 0.1 - 7 GHz. Using the obtained spectra, a comprehensive analysis of the absorbing characteristics of the composites was carried out, and the factors responsible for the absorption were determined. Fitting of the composites magnetic permeability spectra show that the process of natural ferromagnetic resonance prevails over the resonance of domain walls, and a decrease in the concentration of ferrite inclusions leads to a significant shift in the frequency of natural ferromagnetic resonance to high frequencies. It was found that for composites with a thickness of 5 - 10 mm, compositions with a mass fraction of ferrite ≤ 0.4 show radio-absorbing properties, while compositions with a fraction of ≥ 0.6 show shielding properties.

Ferroelectric domain-wall logic units

The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

A Grease for Domain Walls Motion in HfO2-based Ferroelectrics

A large coercive field EC of HfO2 based ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduce EC by fabricating nanolaminate Hf0.5Zr0.5O2 / ZrO2 (HZZ) thin films is used, followed by an ensuing annealing process at a comparatively high temperature 700 °C. High-resolution electron microscopy imaging detects tetragonal-like domain walls between orthorhombic polar regions. These walls decrease the potential barrier of polarization reversal in HfO2 based films compared to the conventional domain walls with a single non-polar spacer, causing about a 40% decrease in EC. Capacitance vs. electric field measurements on HZZ thin film uncovered a substantial increase of dielectric permittivity near the EC compared to the conventional Hf0.5Zr0.5O2 thin film, justifying the higher mobility of domain walls in the developed HZZ film. The tetragonal-like regions served as grease easing the movement of the domain wall and reducing EC

Deepening of domains at e-beam writing on the -Z surface of lithium niobate

The focus of the study was to investigate the peculiarities of the domains created by electron beam (e-beam) in a surface layer of congruent lithium niobate, which comparable to a depth of electron beam charge penetration. Direct e-beam writing (DEBW) of different domain structures with a scanning electron microscope was performed on the polar -Z cut. Accelerating voltage 15 kV and e-beam current 100 pA were applied. Different patterns of local irradiated squares were used to create domain structures and single domains. No domain contrast was observed by the PFM technique. Based on chemical etching, it was found that the vertices of the domains created do not reach the surface level. The average deepening of the domain vertices was several hundred nanometers and varied depending on the irradiation dose and the location of the irradiated areas (squares) relative to each other. Computer simulation was applied to analyze the spatial distribution of the electric field in the various irradiated patterns. The deepening was explained by the fact that in the near-surface layer there is a sign inversion of the normal component of the electric field strength vector, which controls the domain formation during DEBW. Thus, with the help of e-beam, domains were created completely located in the bulk, in contrast to the domains that are nucleated on the surface of the -Z cut during the polarization inversion with AFM tip. The detected deepening of e-beam domains suggests the possibility of creating the “head-to-head” domain walls in the near-surface layer lithium niobate by DEBW.