Carrier Transport Effects in SCH Laser Diodes

1998 ◽  
Vol 52 (2) ◽  
pp. 93-96
Author(s):  
I. A. Sukhoivanov ◽  
W. Freude
Keyword(s):  
Carrier Transport ◽  
Laser Diodes ◽  
Transport Effects

Investigation of carrier transport effects in multiple‐quantum‐well lasers

1995 ◽  
Vol 78 (9) ◽  
pp. 5515-5517 ◽  
Author(s):  
Y. Chen ◽  
M. S. Wartak ◽  
H. Lu ◽  
T. Makino
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Transport Effects

Interface Recombination and Threshold Current in Grinsch-QW ALGaAs/GaAs Laser Diodes

1991 ◽  
Vol 240 ◽  
Author(s):  
K. Xie ◽  
H. M. Kim ◽  
C. R. Wie ◽  
J. A. Varriano ◽  
G. W. Wicks
Keyword(s):  
Transport Process ◽  
Carrier Transport ◽  
Deep Level ◽  
Laser Diodes ◽  
Threshold Current ◽  
High Threshold ◽  
High Concentration ◽  
Double Crystal ◽  
Graded Index ◽  
Interface Recombination

ABSTRACTA series of Graded-Index Waveguide Separate-Confinement Heterostructure Quantum Well (GRINSCH-QW) laser diodes were grown by MBE at the systematically varied substrate temperatures. The threshold current of laser diodes were found to depend strongly on the growth temperature. The structure and electrical characteristics of the laser diodes were studied by double-crystal x-ray diffraction, I-V-T, C-V and deep level transient spectroscopy (DLTS). The interface recombination is found to be the dominant carrier transport process in the high threshold current laser diodes and is closely related to the presence of the high concentration of deep traps and interface states. In the low threshold current laser diodes, diffusion process is found to be the dominant carrier transport process.

Study of carrier transport effects on quantum well lasers using a SPICE simulator

1995 ◽  
Vol 142 (5) ◽  
pp. 237-240 ◽  
Author(s):  
M.F. Lu ◽  
M.J. Jou ◽  
C. Juang ◽  
B.J. Lee
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Quantum Well Lasers ◽  
Transport Effects
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