New high-luminance thin-film electroluminescent devices using ZnGa2O4 phosphor emitting layers

1996 ◽  
Vol 4 (2) ◽  
pp. 53 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shinzo Takata ◽  
Yoshihiro Kuroi ◽  
Takanori Maeno
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Thin Film Electroluminescent Devices Using Monoclinic Y2O3 Phosphor Activated with Mn

2002 ◽  
Vol 41 (Part 2, No. 4B) ◽  
pp. L478-L480 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata ◽  
Shingo Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Green Zn2SiO4:Mn Thin-Film Electroluminescent Devices Using an Insulating BaTiO3Ceramic Sheet

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L117-L119 ◽  
Author(s):  
Tadatsugu Minami ◽  
Toshihiro Miyata ◽  
Shinzo Takata ◽  
Ichiro Fukuda
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Thin-Film Electroluminescent Devices Using ((Y2O3)0.6-(GeO2)0.4):Mn Phosphors

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L577-L579 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Toshihiro Miyata ◽  
Shingo Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

Red Emitting Electroluminescent Devices Using Ga2O3 Phosphor Thin Films Prepared by Sol-Gel Process

2001 ◽  
Vol 667 ◽  
Author(s):  
Tadatsugu Minami ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Deposition Method ◽  
Sinusoidal Wave ◽  
High Luminance ◽  
Insulating Layer ◽  
Electroluminescent Devices ◽  
Sol Gel Process ◽  
Dopant Source

ABSTRACTHigh-luminance red-emitting thin-film electroluminescent (TFEL) devices have been developed using Ga2O3 phosphor thin films prepared by a sol-gel deposition method. Single-insulating-layer-type TFEL devices were fabricated by depositing a Cr- or a Eu-activated Ga2O3 phosphor thin film onto a thick BaTiO3 ceramic sheet insulator. The Ga2O3:Cr or Ga2O3:Eu thin-film emitting layer was prepared by a sol-gel process using gallium acethylacetonate (Ga(C5H7O2)3) as the Ga source with Cr(C5H7O2)3 or EuC13 as the dopant source, respectively. A high red luminance of 622 cd/m2 was obtained for a Ga2O3:Cr TFEL device driven by a sinusoidal wave voltage at 1 kHz.

High-Luminance Blue-Emitting BaAl2S4:Eu Thin-Film Electroluminescent Devices

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1291-L1292 ◽  
Author(s):  
Noboru Miura ◽  
Mitsuhiro Kawanishi ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Multicolor-Emitting Thin-Film Electroluminescent Devices Using (Y2O3-Ga2O3):Mn Phosphors

2003 ◽  
Vol 42 (Part 2, No. 8B) ◽  
pp. L1018-L1020 ◽  
Author(s):  
Tadatsugu Minami ◽  
Toshihiro Miyata ◽  
Yasuyuki Suzuki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-luminance SrS:Ce,Ga,F thin-film-electroluminescent devices

1998 ◽  
Vol 6 (1) ◽  
pp. 61 ◽  
Author(s):  
S.-S. Sun ◽  
T. Nguyen ◽  
M. S. Bowen ◽  
J. Kane ◽  
P. N. Yocom ◽  
...  
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-Luminance Green-Emitting Thin-Film Electroluminescent Devices Using $\bf ZnGa_{2}O_{4}:Mn$ Phosphor

1995 ◽  
Vol 34 (Part 2, No. 6A) ◽  
pp. L684-L687 ◽  
Author(s):  
Tadatsugu Minami ◽  
Takanori Maeno ◽  
Yoshihiro Kuroi ◽  
Shinzo Takata
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices

High-luminance thin-film electroluminescent devices using Y2O3:Mn phosphor

2003 ◽  
Vol 443 (1-2) ◽  
pp. 91-96 ◽  
Author(s):  
Tadatsugu Minami ◽  
Youhei Kobayashi ◽  
Toshihiro Miyata ◽  
Masashi Yamazaki
Keyword(s):  
Thin Film ◽  
High Luminance ◽  
Electroluminescent Devices
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