A Quantum Dot Optical Modulator for Integration With Si CMOS

2005 ◽  
Author(s):  
Y. H. Xie
Keyword(s):  
Quantum Dot ◽  
Optical Modulator

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EC16 ◽  
Author(s):  
Naokatsu Yamamoto ◽  
Kouichi Akahane ◽  
Toshimasa Umezawa ◽  
Atsushi Matsumoto ◽  
Tetsuya Kawanishi
Keyword(s):  
Quantum Dot ◽  
Optical Communication ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Optical Modulator ◽  
Monolithically Integrated

scholarly journals An optical modulator based on a single strongly coupled quantum dot - cavity system in a p-i-n junction

2009 ◽  
Vol 17 (21) ◽  
pp. 18651 ◽  
Author(s):  
Dirk Englund ◽  
Andrei Faraon ◽  
Arka Majumdar ◽  
Nick Stoltz ◽  
Pierre Petroff ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Modulator ◽  
Strongly Coupled ◽  
Cavity System

Characterization of Ge Quantum Dot Optical Waveguides for High Speed Optical Modulators

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840001
Author(s):  
Jan Amir Khan ◽  
Evan Heller ◽  
Faquir Jain
Keyword(s):  
Quantum Dot ◽  
Optical Waveguides ◽  
High Speed ◽  
Low Cost ◽  
Optical Modulator ◽  
Multimode Waveguide ◽  
Optical Modulators ◽  
Speed Modulation ◽  
Self Assembled

Quantum Dot (QD) Optical Modulators can provide high speed modulation in low cost indirect bandgap materials. Si based optical modulators can be realized with the inclusion of self-assembled Ge QDs to provide low cost, high speed CMOS compatible optical devices. In this paper, we present the optical characterization of a novel Ge-QD Si-SiO2 based waveguide for use in as an optical modulator. Optical performance figures of merit are investigated including insertion loss (IL) measurements, and Wavelength dependent loss (WDL). We present a multimode waveguide fabricated with conventional CMOS processing. The waveguide provides 4.43dB/cm loss and individual discrete absorption regimes corresponding to the unique minibands produced by superlattice properties of the self-assembled Ge QDs in the IR regime. Absorption properties of the Ge QDs are demonstrated and verified against the QD superlattice bandgap model. Analysis and simulation is presented to qualitatively compare the QD bandgap energies with the reported optical properties. The QD functionalized structure demonstrates the fundamental optical principles of a QD waveguide, setting the foundation for a active modulation testing of this QD based optical modulator.

Electrically Driven Optical Modulator with a Strongly Coupled Quantum Dot

2009 ◽  
Author(s):  
Andrei Faraon ◽  
Arka Majumdar ◽  
Hyochul Kim ◽  
Pierre Petroff ◽  
Jelena Vuckovic
Keyword(s):  
Quantum Dot ◽  
Optical Modulator ◽  
Strongly Coupled
Sign in / Sign up

Export Citation Format

Share Document