All-Optical Modulation Technology Based on 2D Layered Materials

In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.

Reduction in DC-Drift in LiNbO3-Based Electro-Optical Modulator

This study involves the results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is measured in minutes, and for a long-term drift it is measured in hours and days. DC-drift was measured by applying bias voltage and changing crystal temperature. The obtained results show significant impact on the stability of operating point in EO-modulators after treatment of defective structure of the near-surface layer of a LiNbO3 crystal. Treatment of the disturbed near-surface layer of a LiNbO3 crystal results in the simultaneous reduction in short-term DC-drift and increase in operation stability of electro-optical modulators during long-term measurement of temperature by activation energy calculation.

Investigation of near-surface layer dislocation density of lithium niobate single crystal wafers using chemical etching

Using chemical etching it was shown that the density of dislocation in lithium niobate (LN) single crystal wafers is higher near the surface in depth about 20 um than in the depth of crystal. It caused to change of diffusion coefficient during the waveguide formation with proton exchange (PE) method and can increase DC-drift of intensity optical modulators based on PE-waveguides.

Thermo-optically induced transparency on a photonic chip

Controlling the optical response of a medium through suitably tuned coherent electromagnetic fields is highly relevant in a number of potential applications, from all-optical modulators to optical storage devices. In particular, electromagnetically induced transparency (EIT) is an established phenomenon in which destructive quantum interference creates a transparency window over a narrow spectral range around an absorption line, which, in turn, allows to slow and ultimately stop light due to the anomalous refractive index dispersion. Here we report on the observation of a new form of both induced transparency and amplification of a weak probe beam in a strongly driven silicon photonic crystal resonator at room temperature. The effect is based on the oscillating temperature field induced in a nonlinear optical cavity, and it reproduces many of the key features of EIT while being independent of either atomic or mechanical resonances. Such thermo-optically induced transparency will allow a versatile implementation of EIT-analogs in an integrated photonic platform, at almost arbitrary wavelength of interest, room temperature and in a practical, low cost, and scalable system.

Graphene Optical Modulators Using Bound States in the Continuum

Graphene-based optical modulators have been widely investigated due to the high mobility and tunable permittivity of graphene. However, achieving a high modulation depth with a low insertion loss is challenging owing to low graphene-light interaction. To date, only waveguide-type modulators have been extensively studied to improve light-graphene interaction, and few free-space type modulators have been demonstrated in the optical communication wavelength range. In this study, we propose two graphene-based optical free-space type modulators in a simple silicon photonic crystal structure that supports bound states in the continuum. The designed modulator with an ultra-high quality factor from the bound states in the continuum achieves a high modulation depth (MD = 0.9972) and low insertion loss (IL=0.0034) with a small Fermi level change at the optical communication wavelength. In addition, the proposed modulators support outstanding modulation performance in the normal chemical vapor deposition (CVD) graphene (mobility = 0.5 m2/Vs). We believe the scheme may pave the way for graphene-based optical active devices.

A tailored ultra-broadband electromagnetically induced transparency metamaterial based on graphene

Based on graphene, an ultra-broadband electromagnetically induced transparency (EIT) window with dynamic tunability is realized in theory. Through altering the Fermi level of graphene that can be regulated by the external voltage, the EIT window and the EIT effect, especially the slow-wave effect, can be easily adjusted. Moreover, the bandwidth of the EIT window can be changed by the incidence angle, achieving the transformation from broadband to narrowband. At the same time, by discussing the polarization state and loss index, the characteristics of polarization insensitivity and low loss are proved. Additionally, the influences of other parameters are discussed, such as the relaxation time of graphene and coupling distance. These unique features enable the designed EIT metamaterial to be masterly applied to optical switches, optical modulators, and slow-light devices.

Reduction of DC-drift in LiNbO3-based Electro-optical Modulator

This work involves results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is minutes, and for a long-term drift, hours and days. DC-drift was measured by applying bias voltage and changing crystal temperature. Obtained results shows significant impact on stability of operating point in EO-modulators after treatment of defective structure of the near-surface layer of a LiNbO3 crystal. Treatment of the disturbed near-surface layer of a LiNbO3 crystal results in twice reduction of short-term DC-drift and increase of operation stability of electro-optical modulators during long-term measurement of temperature by activation energy calculation.