scholarly journals A consideration on the expansion phenomenon of high density copper powder compact due to sintering.

1986 ◽  
Vol 33 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Koji Hayashi ◽  
Hiroshi Asanuma ◽  
Masao Itabashi
Keyword(s):  
Copper Powder ◽  
Powder Compact ◽  
High Density

Creep densification of copper powder compact

1996 ◽  
Vol 38 (11) ◽  
pp. 1197-1208 ◽  
Author(s):  
M.C. Song ◽  
H.G. Kim ◽  
K.T. Kim
Keyword(s):  
Copper Powder ◽  
Powder Compact

scholarly journals Observation of Particle Behaviors in the Copper Powder Compact during Pulsed Electric Discharge

2001 ◽  
Vol 65 (9) ◽  
pp. 868-873 ◽  
Author(s):  
Hideaki Kuramoto ◽  
Kazuhiro Matsugi ◽  
Tomei Hatayama ◽  
Osamu Yanagisawa
Keyword(s):  
Electric Discharge ◽  
Copper Powder ◽  
Powder Compact

Observation of particle behavior in copper powder compact during pulsed electric discharge

2003 ◽  
Vol 350 (1-2) ◽  
pp. 184-189 ◽  
Author(s):  
O. Yanagisawa ◽  
H. Kuramoto ◽  
K. Matsugi ◽  
M. Komatsu
Keyword(s):  
Electric Discharge ◽  
Copper Powder ◽  
Powder Compact ◽  
Particle Behavior

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Sign in / Sign up

Export Citation Format

Share Document