Geophysical logs of four drill holes, Acord Lakes and Emery West quadrangles, Sevier County, Utah

1982 ◽  
Author(s):  
H.F. Albee
Keyword(s):  
Geophysical Logs ◽  
Sevier County ◽  
Drill Holes

scholarly journals Geophysical logs of 13 drill holes, Acord Lakes Quadrangle, Utah

1980 ◽  
Author(s):  
Howard F. Albee
Keyword(s):  
Geophysical Logs ◽  
Drill Holes

scholarly journals Lithologic and geophysical logs of drill holes Felderhoff Federal 5-1 and 25-1, Amargosa Desert, Nye County, Nevada

1995 ◽  
Author(s):  
W.J. Carr ◽  
J.A. Grow ◽  
S.M. Keller
Keyword(s):  
Geophysical Logs ◽  
Nye County ◽  
Drill Holes

scholarly journals Lithologic and geophysical logs of drill holes Felderhoff Federal 5-1 and 25-1, Amargosa Desert, Nye County, Nevada

1995 ◽  
Author(s):  
Wilfred James Carr ◽  
John A. Grow ◽  
S.M. Keller
Keyword(s):  
Geophysical Logs ◽  
Nye County ◽  
Drill Holes

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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