Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

scholarly journals A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers

2011 ◽  
Vol 32 (7) ◽  
pp. 2227-2232 ◽  
Author(s):  
Sung-Wook Lee ◽  
Sang-Hak Lee ◽  
Young-Hoon Kim ◽  
Ja-Young Kim ◽  
Don-Ha Hwang ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Boron Doped ◽  
Highly Sensitive ◽  
Doped Silicon ◽  
Sensitive Determination

In Situ HREM Studies of Grain Boundary Formation during Solidification of B-Doped Silicon

2005 ◽  
Vol 475-479 ◽  
pp. 3875-3878 ◽  
Author(s):  
Hiroshi Fukushima ◽  
Isamu Kuchiwaki ◽  
Takahiro Hirabayashi
Keyword(s):  
Melting Temperature ◽  
Fine Particles ◽  
Rotation Angle ◽  
Solidification Process ◽  
Twist Boundary ◽  
Boron Doped ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Liquid Part

In situ high-resolution transmission electron microscopy experiments were applied to examine the nano-scale solidification process of boron-doped silicon from the liquid state. Fine particles of the specimen were first heated up to the melting temperature using a TEM heating-holder, and then gradually cooled across the melting temperature. The specimen was observed nearly along [001] direction. The lattice fringe of (220) plane was observed during solidification, and this part combined with the other liquid part to make a twist boundary. The angle between the (220) planes of these two crystal grains was close to the rotation angle of the (001) Σ5 twist boundary.

scholarly journals In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

2022 ◽  
Vol 2022 ◽  
pp. 1-12
Author(s):  
Shuai Yuan ◽  
Siqi Ding ◽  
Bin Ai ◽  
Daming Chen ◽  
Jingsheng Jin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dominant Role ◽  
Short Circuit ◽  
Industrial Process ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Silicon Wafers ◽  
Boron Doped ◽  
Minority Carriers

In order to investigate the light-induced-degradation (LID) and regeneration of industrial PERC solar cells made from different positions of silicon wafers in a silicon ingot, five groups of silicon wafers were cut from a commercial solar-grade boron-doped Czochralski silicon (Cz-Si) ingot from top to bottom with a certain distance and made into PERC solar cells by using the standard industrial process after measuring lifetimes of minority carriers and concentrations of boron, oxygen, carbon, and transition metal impurities. Then, the changes of their I - V characteristic parameters (efficiency η , open-circuit voltage V oc , short-circuit current I sc , and fill factor FF ) with time were in situ measured by using a solar cell I - V tester during the 1st LID (45°C, 1 sun, 12 h), regeneration (100°C, 1 sun, 24 h), and 2nd LID (45°C, 1 sun, 12 h). The results show that the LID and regeneration of the PERC solar cells are caused by the transition of B-O defects playing a dominant role together with the dissociation of Fe-B pairs playing a secondary role. The decay of η during the 1st LID is caused by the degradation of V oc , I sc , and FF , while the increase of η during the regeneration is mainly contributed by V oc and FF , and the decay of η during the 2nd LID is mainly induced by the degradation of I sc . After regeneration, the decay rate of η reduces from 4.43%–5.56% (relative) during the 1st LID to 0.33%–1.75% (relative) during the 2nd LID.

scholarly journals Silicon wafer strain under local photonic annealing

2019 ◽  
Vol 20 (2) ◽  
pp. 142-147
Author(s):  
V. V. Starkov ◽  
E. A. Gosteva ◽  
D. V. Irzhak ◽  
D. V. Roshchupkin
Keyword(s):  
Crystal Structure ◽  
Low Temperatures ◽  
Tensile Strain ◽  
Silicon Wafers ◽  
Local Processing ◽  
Back Side ◽  
X Ray Diffraction ◽  
X Ray ◽  
Boron Doped ◽  
Doped Silicon

The effect of photon annealing on the occurrence of deformations in the crystal structure of boron−doped silicon wafers produced by the Czochralski (Cz−Si) was studied by the method of triple−X−ray diffraction. It was found that the traditional annealing of silicon wafers with polished surfaces on both sides by halogen lamps in Photonic Annealing (PA) and rapid thermal annealing modes (RTA) leads to compression deformation. The same process with the use of original photo− mask, which allows local processing produces multiple, spatially separated regions of the plate produced by Lосаl Photonic Annealing (LPA) at relatively low temperatures (less than 55 °C), gives rise to a tensile strain. This established effect is not observed if on the back side of the plates there is mechanical gettering layer. The mechanism explaining the experimental results can be used in the formation of the charge pump in the structure of the photo electric converters (PEC).

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