Surface chemical analysis. Secondary-ion mass spectrometry. Determination of relative sensitivity factors from ion-implanted reference materials

Mapping Intimacies ◽

10.3403/02867800 ◽

2003 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Relative Sensitivity ◽

Surface Chemical ◽

Sensitivity Factors ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis � Secondary-ion mass spectrometry � Determination of relative sensitivity factors from ion-implanted reference materials

10.3403/30409890 ◽

2021 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Relative Sensitivity ◽

Surface Chemical ◽

Sensitivity Factors ◽

Secondary Ion ◽

Surface Chemical Analysis

Summary of ISO/TC 201 standard: XIII, ISO 18114:2003—surface chemical analysis—secondary ion mass spectrometry—determination of relative sensitivity factors from ion-implanted reference materials

Surface and Interface Analysis ◽

10.1002/sia.2316 ◽

2006 ◽

Vol 38 (3) ◽

pp. 171-172 ◽

Cited By ~ 5

Author(s):

D. S. Simons

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Relative Sensitivity ◽

Surface Chemical ◽

Sensitivity Factors ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of relative sensitivity factors from ion-implanted reference materials

10.3403/02867800u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Relative Sensitivity ◽

Surface Chemical ◽

Sensitivity Factors ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials

10.3403/02007712 ◽

2000 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Atomic Concentration ◽

Ion Mass Spectrometry ◽

Doped Materials ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials

10.3403/30153671 ◽

2010 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Atomic Concentration ◽

Ion Mass Spectrometry ◽

Doped Materials ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

10.3403/30138811u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis

Summary of ISO/TC 201 standard: XV. ISO 20341:2003—Surface chemical analysis—secondary ion mass spectrometry—method for estimating depth resolution parameters with multiple delta-layer reference materials

Surface and Interface Analysis ◽

10.1002/sia.2057 ◽

2005 ◽

Vol 37 (7) ◽

pp. 646-647 ◽

Cited By ~ 7

Author(s):

D. W. Moon

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Depth Resolution ◽

Surface Chemical ◽

Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Method for estimating depth resolution parameters with multiple delta-layer reference materials

10.3403/02869026u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Depth Resolution ◽

Surface Chemical ◽

Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis

Summary of ISO/TC 201 Standard: II ISO 14237:2000?Surface chemical analysis?Secondary ion mass spectrometry?Determination of boron atomic concentration in silicon using uniformly doped materials

Surface and Interface Analysis ◽

10.1002/sia.1190 ◽

2002 ◽

Vol 33 (4) ◽

pp. 361-362 ◽

Cited By ~ 7

Author(s):

Y. Homma

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Atomic Concentration ◽

Ion Mass Spectrometry ◽

Doped Materials ◽

Secondary Ion ◽

Surface Chemical Analysis

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

10.3403/30138811 ◽

2009 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis