Transparent conductive ITO films were fabricated on soda lime float glass substrate by
colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was
systematically studied that the effect of the electrical, the structure and optical properties of the ITO
doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS
spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was
observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of
ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase
of the annealing temperature and holding time; the transmissivity of the ITO films was higher than
80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick
was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).
Optical properties of soda lime float glass from 3 mm to 148 nm (0.41 meV to 8.38 eV) by spectroscopic ellipsometry
