Effects of Oxidizer Concentration in RP-2/H₂O₂ Non-Premixed Counterflow Flames

2021 ◽  
Vol 45 (12) ◽  
pp. 673-679
Author(s):  
Ki Yong Lee
Keyword(s):  
Counterflow Flames ◽  
Oxidizer Concentration

Effects of C1-C3 hydrocarbon blending on aromatics formation in 1-butene counterflow flames

2021 ◽  
Vol 230 ◽  
pp. 111427
Author(s):  
Martina Baroncelli ◽  
Qian Mao ◽  
Heinz Pitsch ◽  
Nils Hansen
Keyword(s):  
Counterflow Flames

Lean and ultralean stretched propane–air counterflow flames

2006 ◽  
Vol 145 (4) ◽  
pp. 647-662 ◽  
Author(s):  
Z CHENG ◽  
R PITZ ◽  
J WEHRMEYER
Keyword(s):  
Counterflow Flames

scholarly journals Ignition of non-premixed counterflow flames of octane and decane isomers

2013 ◽  
Vol 34 (1) ◽  
pp. 903-910 ◽  
Author(s):  
Ning Liu ◽  
S. Mani Sarathy ◽  
Charles K. Westbrook ◽  
Fokion N. Egolfopoulos
Keyword(s):  
Counterflow Flames

CARS Measurements and Numerical Simulation Results for Methane/Air Counterflow Flames

1992 ◽  
Vol 96 (4) ◽  
pp. 579-585 ◽  
Author(s):  
E. Dießel ◽  
T. Dreier ◽  
B. Lange ◽  
J. Wolfrum ◽  
F. Behrendt ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Simulation Results ◽  
Counterflow Flames

Structure Responses of n-Heptane/Air Counterflow Flames to Air-Side Partial Premixing of Dimethyl Ether

2019 ◽  
Vol 33 (7) ◽  
pp. 6754-6766
Author(s):  
Xiaoqin Lu ◽  
Ge Hu ◽  
Yituan He ◽  
Shiyong Liao ◽  
Xiaochun Jian ◽  
...  
Keyword(s):  
Dimethyl Ether ◽  
Partial Premixing ◽  
Counterflow Flames

Study on the combustion limit, near-limit extinction boundary, and flame regimes of low-Lewis-number CH4/O2/CO2 counterflow flames under microgravity

2016 ◽  
Vol 172 ◽  
pp. 13-19 ◽  
Author(s):  
Tomoya Okuno ◽  
Hisashi Nakamura ◽  
Takuya Tezuka ◽  
Susumu Hasegawa ◽  
Koichi Takase ◽  
...  
Keyword(s):  
Lewis Number ◽  
Combustion Limit ◽  
Counterflow Flames

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

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