Investigation of proper imaging conditions in the moving grid technique for a reduction of grid line artifacts

2014 ◽  
Vol 65 (9) ◽  
pp. 1462-1467
Author(s):  
Chulkyu Park ◽  
Hyosung Cho ◽  
Uikyu Je ◽  
Daeki Hong ◽  
Minsik Lee ◽  
...  
2020 ◽  
Vol 77 ◽  
pp. 1936-1953 ◽  
Author(s):  
Mohammad Ghalambaz ◽  
Seyed Mohsen Hashem Zadeh ◽  
S.A.M. Mehryan ◽  
Ioan Pop ◽  
Dongsheng Wen

2009 ◽  
Vol 17 (2) ◽  
Author(s):  
Ebrahim Jahanbakhsh ◽  
Roozbeh Panahi ◽  
Mohammad Saeed Seif

Author(s):  
L. E. Thomas ◽  
J. S. Lally ◽  
R. M. Fisher

In addition to improved penetration at high voltage, the characteristics of HVEM images of crystalline materials are changed markedly as a result of many-beam excitation effects. This leads to changes in optimum imaging conditions for dislocations, planar faults, precipitates and other features.Resolution - Because of longer focal lengths and correspondingly larger aberrations, the usual instrument resolution parameter, CS174 λ 374 changes by only a factor of 2 from 100 kV to 1 MV. Since 90% of this change occurs below 500 kV any improvement in “classical” resolution in the MVEM is insignificant. However, as is widely recognized, an improvement in resolution for “thick” specimens (i.e. more than 1000 Å) due to reduced chromatic aberration is very large.


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