An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method
2015 ◽
Vol 8
(3)
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pp. 356-382
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Keyword(s):
AbstractThe mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potential equation. For the two convection-dominated concentration equations, a characteristics-mixed finite element method is presented. The scheme is locally conservative. The optimalL2-norm error estimates are derived by the aid of a post-processing step. Finally, numerical experiments are presented to validate the theoretical analysis.
1990 ◽
Vol 26
(2)
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pp. 674-677
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2000 ◽
2016 ◽
Vol 09
(11)
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pp. 5806-5820
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2021 ◽
Vol 393
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pp. 113504
Keyword(s):
2011 ◽
Vol 33
(3)
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pp. 1439-1474
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2017 ◽
Vol 74
(1)
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pp. 396-411
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