Linearity Improved High Efficiency GaN-HEMT Dual-Band Doherty Power Amplifier

The Journal of Korean Institute of Electromagnetic Engineering and Science ◽

10.5515/kjkiees.2021.32.3.209 ◽

2021 ◽

Vol 32 (3) ◽

pp. 209-214

Author(s):

Kyu-sik Woo ◽

Chul-hun Seo

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Dual Band ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text

A Dual-Band High Efficiency Class-F GaN HEMT Power Amplifier for Wireless Communication

IETE Journal of Research ◽

10.1080/03772063.2019.1619486 ◽

2019 ◽

pp. 1-8

Author(s):

Sh. Rezaei Borjlu ◽

M. S. Khadem

Keyword(s):

Wireless Communication ◽

Power Amplifier ◽

High Efficiency ◽

Dual Band ◽

Gan Hemt ◽

Download Full-text

Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2012.2189120 ◽

2012 ◽

Vol 60 (6) ◽

pp. 1840-1849 ◽

Author(s):

Paul Saad ◽

Paolo Colantonio ◽

Luca Piazzon ◽

Franco Giannini ◽

Kristoffer Andersson ◽

...

Keyword(s):

Power Amplifier ◽

Dual Band ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text

A Ka-Band High Efficiency Doherty Power Amplifier MMIC using GaN-HEMT for 5G Application

2018 IEEE MTT-S International Microwave Workshop Series on 5G Hardware and System Technologies (IMWS-5G) ◽

10.1109/imws-5g.2018.8484612 ◽

2018 ◽

Author(s):

Keigo Nakatani ◽

Yutaro Yamaguchi ◽

Yuji Komatsuzaki ◽

Shuichi Sakata ◽

Shintaro Shinjo ◽

...

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Ka Band ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text

High-Efficiency GaN-HEMT Doherty Power Amplifier with Compact Harmonic Control Networks

The Journal of Korean Institute of Electromagnetic Engineering and Science ◽

10.5515/kjkiees.2015.26.9.783 ◽

2015 ◽

Vol 26 (9) ◽

pp. 783-789

Author(s):

Yoonjae Kim ◽

Minseok Kim ◽

Hyunuk Kang ◽

Sooho Cho ◽

Jongseok Bae ◽

...

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Control Networks ◽

Harmonic Control ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text

Harmonic-Tuned High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two- Power- Level Impedance Optimization

2019 IEEE Asia-Pacific Microwave Conference (APMC) ◽

10.1109/apmc46564.2019.9038315 ◽

2019 ◽

Author(s):

Takuya Seshimo ◽

Yoichiro Takayama ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Power Level ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text

ANTI-INTERFERENCE CIRCUIT CONFIGURATION FOR CONCURRENT DUAL-BAND OPERATION IN HIGH-EFFICIENCY GAN HEMT POWER AMPLIFIER

Progress In Electromagnetics Research C ◽

10.2528/pierc19041302 ◽

2019 ◽

Vol 93 ◽

pp. 199-209

Author(s):

Haruka Nishizawa ◽

Yoichiro Takayama ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Dual Band ◽

Gan Hemt ◽

Interference Circuit ◽

Circuit Configuration

Download Full-text

A High-Efficiency Low-Distortion GaN HEMT Doherty Power Amplifier With a Series-Connected Load

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2011.2176505 ◽

2012 ◽

Vol 60 (2) ◽

pp. 352-360 ◽

Author(s):

Satoshi Kawai ◽

Yoichiro Takayama ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

Low Distortion ◽

Doherty Power Amplifier

Download Full-text

A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392935 ◽

2020 ◽

Author(s):

Shuoqi Chen ◽

Vipan Kumar ◽

Yu Cao

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Download Full-text

A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

Download Full-text

Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier

2017 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2017.8058804 ◽

2017 ◽

Author(s):

Mohammed Ayad ◽

Estelle Byk ◽

Guillaume Neveux ◽

Marc Camiade ◽

Denis Barataud

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

Doherty Power Amplifier

Download Full-text