GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches
2012 ◽
Vol 51
(4S)
◽
pp. 04DG06
◽
2012 ◽
Vol 51
◽
pp. 04DG06
◽
2013 ◽
Vol 52
(4S)
◽
pp. 04CG04
◽
2008 ◽
Vol 39
(3-4)
◽
pp. 362-364
◽
Keyword(s):
2013 ◽
Vol 378
◽
pp. 485-488
◽
Keyword(s):