Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer

InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a Metal Organic Vapor Phase Epitaxy (MOVPE) reactor. Formation of metallic Indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the Indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission Electron Microscopy (TEM) investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement

The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine structure splitting (FSS = X1−X2) and show D3h symmetric excitons. The lowest FSS obtained is 3.9 μeV with the lowest energy X state (LX) anticlockwise rotate from [1−10] (i.e., zero FSS will be crossed in a proper field). The lateral field projection induces a large eh separation and various FSS, LX, and emission intensity polarization. The lateral field along [1−10] breaks the X1–X2 wavefunction degeneracy for independent HH and VV cascade emissions with robust polarization correlation. With FSS ~4 μeV and T1 ~0.3 ns fastened in a distributed Bragg reflector cavity, polarization-resolved XX–X cross-correlations show fidelity ~0.55 to a maximal entangled state |HH> + |VV>. A higher fidelity and zero FSS will be obtained in the hybrid QD structure with a junction field integrated to tune the FSS and a sub-bandgap excitation to avoid influences from electrons in the barrier.