metallic nanostructures
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Nano Today ◽  
2022 ◽  
Vol 42 ◽  
pp. 101348
Author(s):  
Yoo Sang Jeon ◽  
Bum Chul Park ◽  
Min Jun Ko ◽  
Jun Hwan Moon ◽  
Eunjin Jeong ◽  
...  

2021 ◽  
Author(s):  
Mizuki Shimose ◽  
Seiya Toriyama ◽  
Kazuma Hashimoto ◽  
Vygantas Mizeikis ◽  
Atsushi Ono

Author(s):  
Bobo Du ◽  
Yinlan Ruan ◽  
Peipei Jia ◽  
Dexing Yang ◽  
Heike Ebendorff-Heidepriem

Author(s):  
Zahra Kayani ◽  
Negar Islami ◽  
Niloufar Behzadpour ◽  
Niloofar Zahraie ◽  
Sanaz Imanlou ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 580
Author(s):  
Luisa Berger ◽  
Jakub Jurczyk ◽  
Katarzyna Madajska ◽  
Iwona B. Szymańska ◽  
Patrik Hoffmann ◽  
...  

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.


2021 ◽  
Vol 707 ◽  
pp. 121803
Author(s):  
Niyati Shah ◽  
K.A. Nekrasov ◽  
Sanjeev K. Gupta ◽  
P.N. Gajjar ◽  
A.S. Boyarchenkov

2021 ◽  
Vol 12 ◽  
pp. 319-329
Author(s):  
Christian Preischl ◽  
Linh Hoang Le ◽  
Elif Bilgilisoy ◽  
Armin Gölzhäuser ◽  
Hubertus Marbach

Focused electron beam-induced processing is a versatile method for the fabrication of metallic nanostructures with arbitrary shape, in particular, on top of two-dimensional (2D) organic materials, such as self-assembled monolayers (SAMs). Two methods, namely electron beam-induced deposition (EBID) and electron beam-induced surface activation (EBISA) are studied with the precursors Fe(CO)5 and Co(CO)3NO on SAMs of 1,1′,4′,1′′-terphenyl-4-thiol (TPT). For Co(CO)3NO only EBID leads to deposits consisting of cobalt oxide. In the case of Fe(CO)5 EBID and EBISA yield deposits consisting of iron nanocrystals with high purity. Remarkably, the EBISA process exhibits a strong time dependence, which is analyzed in detail for different electron doses. This time dependence is a new phenomenon, which, to the best of our knowledge, was not reported before. The electron-induced cross-linking of the SAM caused by the cleavage of C–H bonds and the subsequent formation of new C–C bonds between neighboring molecules also seems to play a crucial role in the EBISA process. Previous studies showed that iron nanostructures fabricated on top of a cross-linked SAM on Au/mica can be transferred to solid substrates and grids without any changes, aside from oxidation. Here we demonstrate that iron as well as cobalt oxide structures on top of a cross-linked SAM on Ag/mica do change more significantly. The Fe(NO3)3 solution used for etching of the Ag layer also dissolves the cobalt oxide structures and causes dissolution and reduction of the iron structures. These results demonstrate that the fabrication of hybrids of metallic nanostructures onto organic 2D materials is an intrinsically complex procedure. The interactions among the metallic deposits, the substrate for the growth of the SAM, and the associated etching/dissolving agent need to be considered and further studied.


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