Room Temperature Direct Electron Beam Lithography in a Condensed Copper Carboxylate

High-resolution metallic nanostructures can be fabricated with multistep processes, such as electron beam lithography or ice lithography. The gas-assisted direct-write technique known as focused electron beam induced deposition (FEBID) is more versatile than the other candidates. However, it suffers from low throughput. This work presents the combined approach of FEBID and the above-mentioned lithography techniques: direct electron beam lithography (D-EBL). A low-volatility copper precursor is locally condensed onto a room temperature substrate and acts as a positive tone resist. A focused electron beam then directly irradiates the desired patterns, leading to local molecule dissociation. By rinsing or sublimation, the non-irradiated precursor is removed, leaving copper-containing structures. Deposits were formed with drastically enhanced growth rates than FEBID, and their composition was found to be comparable to gas-assisted FEBID structures. The influence of electron scattering within the substrate as well as implementing a post-purification protocol were studied. The latter led to the agglomeration of high-purity copper crystals. We present this as a new approach to electron beam-induced fabrication of metallic nanostructures without the need for cryogenic or hot substrates. D-EBL promises fast and easy fabrication results.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

Microelectronic Engineering ◽

10.1016/0167-9317(92)90534-x ◽

1992 ◽

Vol 19 (1-4) ◽

pp. 737-740

Author(s):

M.N. Webster ◽

A.H. Verbruggen ◽

J. Romijn ◽

H.F.F. Jos ◽

P.M.A. Moors ◽

...

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Bipolar Transistors ◽

Direct Write

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Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.9.663 ◽

1996 ◽

Vol 9 (4) ◽

pp. 663-675 ◽

Cited By ~ 3

Author(s):

Anthony E. Novembre ◽

Regine G. Tarascon ◽

Steven D. Berger ◽

Chris J. Biddick ◽

Myrtle I. Blakey ◽

...

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Direct Write ◽

Design Considerations

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Direct-write electron-beam lithography for submicron integrated circuit fabrication

10.1117/12.280535 ◽

1997 ◽

Author(s):

Grahame C. Rosolen ◽

Warren D. King

Keyword(s):

Electron Beam ◽

Integrated Circuit ◽

Electron Beam Lithography ◽

Direct Write ◽

Integrated Circuit Fabrication ◽

Circuit Fabrication

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Application of direct-write electron-beam lithography for deep-submicron fabrication

10.1117/12.262816 ◽

1996 ◽

Cited By ~ 2

Author(s):

Shyi-Long Shy ◽

Jen Y. Yew ◽

Kazumitsu Nakamura ◽

Chun-Yen Chang

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Deep Submicron ◽

Direct Write

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A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

Journal of Mechanical Design ◽

10.1115/1.4053462 ◽

2022 ◽

pp. 1-48

Author(s):

Yijie Liu ◽

Zhen Zhang

Keyword(s):

Electron Beam ◽

Natural Frequency ◽

High Precision ◽

Electron Beam Lithography ◽

Optimization Design ◽

Large Range ◽

Direct Write ◽

Motion Stage ◽

Cross Axis ◽

Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

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