Thermal conductivity of Gallium Arsenic Nitride ( GaAsN ) epilayer on Gallium Arsenide ( GaAs ) substrate prepared by Molecular Beam Epitaxy technique was measured using pulsed photothermal reflectance technique. Within the thickness ranging from 20 nm to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is about 28 W/mK at room temperature.
