INCREASE OF SHARPNESS OF DIFFUSION-JUNCTION HETERORECTIFIER BY USING RADIATION PROCESSING

Recently it has been elaborated an approach to decrease depth of diffusive- and implanted-junction rectifiers by manufacturing the rectifiers in a semiconductor heterostructure and optimization of annealing of dopant and radiation defects. At the same time with decreasing of depth of the p-n-junction homogeneity of dopant distribution in doped area increases. In this paper we analyzed possibility to increase both the effects at one time by radiation processing of materials of the heterostructure.