ausn phase
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2015 ◽  
Vol 817 ◽  
pp. 325-330
Author(s):  
Yu Hai Qu ◽  
Kai Jin Yang ◽  
Yan Tian Zhou ◽  
Yong Mao ◽  
Wei Zhang ◽  
...  

The sub-rapidly solidified Au-20Sn eutectic alloys were prepared by four different solidification pathways, such as, graphite mold conventional casting, graphite mold injection casting, copper mold injection casting, and water-cooled copper mold suction casting. The precipitating sequences of competing primary phases of sub-rapidly solidified Au-20Sn alloys with four different cooling rates were investigated. The results show that phase selection process is related to the cooling rates during sub-rapid solidification process. The primary ζ'-Au5Sn phase with developed dendrites precipitate at low cooling rate (2.4×10−4.2×102K/min) and the morphologies of the primary ζ'-Au5Sn change to rosette-like at higher cooling rate (9.0×103K/min). While the cooling rate reaches to 3.5×104K/min, the primary ζ'-Au5Sn phase can be suppressed but δ-AuSn phase will precipitate prior to the ζ'-Au5Sn phase. On the basis of the classical nucleation theory and transient nucleation theory, the process of competitive nucleation between the ζ'-Au5Sn phase and the δ-AuSn phase were analyzed for sub-rapid solidified Au-20Sn alloy. The theoretical calculations are consistent with the experimental investigations.


2005 ◽  
Vol 894 ◽  
Author(s):  
G. H. Jeong ◽  
J. H. Kim ◽  
Duhyun Lee ◽  
S. J. Suh

AbstractIn this study, we produced Au-Sn alloy electroplated from a single solution and optimized the composition. The composition of electroplated Au-Sn alloy was Au-31.02 at.% Sn at the condition of 6 ms on - 4 ms off pulse current, 50 °C and 10 mA/cm2. Results in XRD analysis showed that Au-Sn alloy electroplated at DC 10 mA/cm2 had AuSn phase (δ) only and Au5Sn phase (d) appeared with decreasing the pulsed current on time. Also micro-patterned Au-Sn solder bump was produced by photolithography. Though it’s composition of Au-35.98 at.% Sn was not optimum, we tried to bond between Au-Sn solder bump and Si wafer that was coated with Ti (100 nm)/Au (300 nm).


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