2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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9781728131634

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Energy Harvesting and Energy Saving

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950703 ◽

2019 ◽

Keyword(s):

Energy Harvesting ◽

Energy Saving

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Preface

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950681 ◽

2019 ◽

Author(s):

Mutsumi Kimura ◽

Masahiro Yoshimoto

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Invited: Solid-State Lithium Thin-Film Batteries Capable of Fast Charging

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950722 ◽

2019 ◽

Author(s):

Taro Hitosugi

Keyword(s):

Thin Film ◽

Solid State ◽

Thin Film Batteries ◽

Fast Charging

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Keynote Speech: Information processing hardware, physical reservoir computing and complex-valued neural networks

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950700 ◽

2019 ◽

Cited By ~ 2

Author(s):

Akira Hirose ◽

Ryosho Nakane ◽

Gouhei Tanaka

Keyword(s):

Neural Networks ◽

Information Processing ◽

Reservoir Computing ◽

Keynote Speech ◽

Speech Information ◽

Complex Valued

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General Session

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950748 ◽

2019 ◽

Keyword(s):

General Session

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Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950708 ◽

2019 ◽

Author(s):

Kazushi Hayashi ◽

Mototaka Ochi

Keyword(s):

Defect States ◽

Transient Spectroscopy

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Cover Copyright

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950707 ◽

2019 ◽

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Power Devices, Materials, and Analysis

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950688 ◽

2019 ◽

Keyword(s):

Power Devices

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Recent Design Techniques for Improving Sensing Accuracy of Oscillator-based Sensor Interfaces in Standard CMOS Process

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950725 ◽

2019 ◽

Author(s):

Wei Zhou ◽

Wang Ling Goh ◽

Yuan Gao

Keyword(s):

Cmos Process ◽

Standard Cmos Process ◽

Sensor Interfaces ◽

Design Techniques

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Invited: Limiting factors of inversion layer mobility in Si-face 4H-SiC MOSFETs

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950716 ◽

2019 ◽

Author(s):

M. Noguchi ◽

T. Iwamatsu ◽

H. Amishiro ◽

H. Watanabe ◽

N. Miura ◽

...

Keyword(s):

Inversion Layer ◽

Limiting Factors

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2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Energy Harvesting and Energy Saving

Preface

Invited: Solid-State Lithium Thin-Film Batteries Capable of Fast Charging

Keynote Speech: Information processing hardware, physical reservoir computing and complex-valued neural networks

General Session

Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy

Cover Copyright

Power Devices, Materials, and Analysis

Recent Design Techniques for Improving Sensing Accuracy of Oscillator-based Sensor Interfaces in Standard CMOS Process

Invited: Limiting factors of inversion layer mobility in Si-face 4H-SiC MOSFETs

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Latest Publications