2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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TOTAL DOCUMENTS

30

(FIVE YEARS 30)

H-INDEX

1

(FIVE YEARS 1)

Published By IEEE

9781728131634

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Preface

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950681 ◽

2019 ◽

Author(s):

Mutsumi Kimura ◽

Masahiro Yoshimoto

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Invited: Solid-State Lithium Thin-Film Batteries Capable of Fast Charging

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950722 ◽

2019 ◽

Author(s):

Taro Hitosugi

Keyword(s):

Thin Film ◽

Solid State ◽

Thin Film Batteries ◽

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Keynote Speech: Information processing hardware, physical reservoir computing and complex-valued neural networks

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950700 ◽

2019 ◽

Author(s):

Akira Hirose ◽

Ryosho Nakane ◽

Gouhei Tanaka

Keyword(s):

Neural Networks ◽

Information Processing ◽

Reservoir Computing ◽

Keynote Speech ◽

Speech Information ◽

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General Session

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950748 ◽

2019 ◽

Keyword(s):

General Session

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Energy Harvesting and Energy Saving

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950703 ◽

2019 ◽

Keyword(s):

Energy Harvesting ◽

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Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950708 ◽

2019 ◽

Author(s):

Kazushi Hayashi ◽

Mototaka Ochi

Keyword(s):

Defect States ◽

Transient Spectroscopy

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Poster Presentation

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950732 ◽

2019 ◽

Keyword(s):

Poster Presentation

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Organization

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950737 ◽

2019 ◽

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The Recent Resolution and Detection Limit Improvement of EDS and EBSD with SEM: Invited Paper

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950752 ◽

2019 ◽

Author(s):

Hirobumi Morita ◽

Sam Marks ◽

Iain Anderson

Keyword(s):

Detection Limit

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Invited: Limiting factors of inversion layer mobility in Si-face 4H-SiC MOSFETs

2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk48381.2019.8950716 ◽

2019 ◽

Author(s):

M. Noguchi ◽

T. Iwamatsu ◽

H. Amishiro ◽

H. Watanabe ◽

N. Miura ◽

...

Keyword(s):

Inversion Layer ◽

Limiting Factors

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