AMROFloor: An Efficient Aging Mitigation and Resource Optimization Floorplanner for Virtual Coarse-Grained Runtime Reconfigurable FPGAs

With the rapid reduction of CMOS process size, the FPGAs with high-silicon accumulation technology are becoming more sensitive to aging effects. This reduces the reliability and service life of the device. The offline aging-aware layout planning based on balance stress is an effective solution. However, the existing methods need to take a long time to solve the floorplanner, and the corresponding layout solutions occupy many on-chip resources. To this end, we proposed an efficient Aging Mitigation and Resource Optimization Floorplanner (AMROFloor) for FPGAs. First, the layout solution is implemented on the Virtual Coarse-Grained Runtime Reconfigurable Architecture, which contributes to avoiding rule constraints for placement and routing. Second, the Maximize Reconfigurable Regions Algorithm (MRRA) is proposed to quickly determine the RRs’ number and size to save the solving time and ensure an effective solution. Furthermore, the Resource Combination Algorithm (RCA) is proposed to optimize the on-chip resources, reducing the on-Chip Resource Utilization (CRU) while achieving the same aging relief effect. Experiments were simulated and implemented on Xilinx FPGA. The results demonstrate that the AMROFloor method designed in this paper can extend the Mean Time to Failure (MTTF) by 13.8% and optimize the resource overhead by 19.2% on average compared to the existing aging-aware layout solutions.

An N/M-Ratio All-Digital Clock Generator with a Pseudo-NMOS Comparator-Based Programmable Divider

A multiplying delay-locked loop (MDLL)-based all-digital clock generator with a programmable N/M-ratio frequency multiplication capability for digital SoC is presented. The proposed digital MDLL provides programmable N/M-ratio frequency multiplication using a new high-speed Pseudo-NMOS comparator-based programmable divider with small area and low power consumption. The proposed MDLL clock generator can also provide a de-skew function by eliminating the phase offset problem caused by the propagation delay of the front divider in conventional N/M MDLL architectures. Fabricated in a 0.13-µm 1.2-V CMOS process, the proposed digital MDLL clock generates fully de-skewed output clock frequencies from 0.3 to 1.137 GHz with programmable N/M ratios of N = 1~32 and M = 1~16. It achieves a measured effective peak-to-peak jitter of 12 ps at 1.0 GHz when N/M = 8/1. It occupies an active area of only 0.034 mm2 and consumes a power of 10.3 mW at 1.0 GHz.

A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process. A mixer with an enhanced transconductance stage consisting of a DTP is presented to improve linearity. The main transconductance path (MTP) of the DTP includes a common source (CS) amplifier, while the secondary transconductance path (STP) of the DTP is implemented as an improved cross-quad transconductor (ICQT). Two inductors with a bypass capacitor are connected at the common nodes of the transconductance stage and switching stage of the mixer, which acts as a resonator and helps to improve the gain and isolation of the designed mixer. According to the measured results, at 24 GHz the proposed mixer shows that the linearity of output 1-dB compression point (OP1dB) is 3.9 dBm. And the input 1-dB compression point (IP1dB) is 0.9 dBm. Moreover, a maximum conversion gain (CG) of 2.49 dB and a noise figure (NF) of 3.9 dB is achieved in the designed mixer. When the supply voltage is 1.2 V, the power dissipation of the mixer is 3.24 mW. The mixer chip occupies an area of 0.42 mm2.

Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18-µm CMOS technology

Circuits for CMOS two-dimensional (2-D) array data transfer are indispensable for applications such as space and nuclear fields. Issues include to be operated with higher speed, lower power, fewer size penalty and radiation hardness. To meet these requirements, two kinds of CMOS 2-D array data transfer circuits, such as a shift register type and a memory access type, are proposed and fabricated by the standard 0.18-µm CMOS process technology. In the both types, 16 µm pitch, 8×124 array data transfer operations were realized with data rate of more than 1 Gb/s. Furthermore, we conducted 60Co γ-ray irradiation experiments on those circuits. The current consumption ratio of the shift register type to the memory access type ranges from 150 to 200% as the dosage increases. The result indicate that the memory access type has better radiation hardness at 1 Gb/s than that of the shift register type.

A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications

This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process. Multiple bandwidth enhancement techniques, including input bonding wire, input series on-chip inductive peaking and negative capacitance compensation, are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device, achieving an overall bandwidth enhancement ratio of 8.5. The electrical measurement shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector. The optical measurement demonstrates a clear open eye of 20 Gb/s. The TIA dissipates 4 mW from a 1.2-V supply voltage.

Design of a 9-bit column-parallel ADC in the MAPS for real-time beam monitoring

This paper describes a 2 Msps 9-bit column-parallel ADC for monolithic active pixel sensor. It is designed in fully differential cyclic architecture and takes eight clock cycles to perform a 9-bit conversion. This ADC is fabricated in a 130 nm CMOS process. Each ADC covers a small area of 100 µm × 300 µm and consumes ∼5 mW. The measurement results show that this ADC has a signal-to-noise and distortion ratio (SNDR) of 46.8 dB. The DNL (Differential Nonlinearity) and (Integral Nonlinearity) INL are 0.168 LSB and 0.112 LSB, respectively. The effective number of bits (ENOB) is 7.48 bits.

Flexible silicon nanowires sensor for acetone detection on plastic substrates

Acetone commonly exists in daily life and is harmful to human health, therefore the convenient and sensitive monitoring of acetone is highly desired. In addition, flexible sensors have the advantages of light-weight, conformal attachable to irregular shapes, etc. In this study, we fabricated high performance flexible silicon nanowires (SiNWs) sensor for acetone detection by transferring the monocrystalline Si film and metal-assisted chemical etching method on polyethylene terephthalate (PET). The SiNWs sensor enabled detection of gaseous acetone with a concentration as low as 0.1 parts per million (ppm) at flat and bending states. The flexible SiNWs sensor was compatible with the CMOS process and exhibited good sensitivity, selectivity and repeatability for acetone detection at room temperature. The flexible sensor showed performance improvement under mechanical bending condition and the underlying mechanism was discussed. The results demonstrated the good potential of the flexible SiNWs sensor for the applications of wearable devices in environmental safety, food quality, and healthcare.

Approximate Square Root Circuits with Low Latency and Power Dissipation

This paper proposes a series of approximate square root circuit designs with high accuracy, low latency, low area, and low power dissipation requirements. The proposed designs are constructed using an array of controlled add–subtract cell elements with both exact and approximate versions. The utility of the proposed designs are evaluated by utilizing them in an example image contrast enhancement application with demonstrably satisfactory results and large peak signal-to-noise ratios and structural similarity values. The accuracy and hardware characteristics of the proposed square root designs are also analyzed and compared with previously proposed state-of-the-art approximate square root designs. When applied to a 16-bit radicand (the number under the square root symbol), the proposed designs have the lowest error rates, normalized mean error distances, and mean relative error distances by at least 1.8x when compared to all previous methods using the same number of approximate cells. When the designs were synthesized using Synopsys Design Compiler with a 28 nm bulk CMOS process, the delay, area, power, and power-delay-product characteristics outperform all previous designs in all but a few cases. These results demonstrate that the proposed designs permit the use of a flexible range of approximate designs with varying accuracy and hardware overhead characteristics, and a suitable design can be selected based on the user design requirements.

Design of a Capacitance-to-Digital Converter Based on Iterative Delay-Chain Discharge in 180 nm CMOS Technology

The design of advanced miniaturized ultra-low power interfaces for sensors is extremely important for energy-constrained monitoring applications, such as wearable, ingestible and implantable devices used in the health and medical field. Capacitive sensors, together with their correspondent digital-output readout interfaces, make no exception. Here, we analyse and design a capacitance-to-digital converter, based on the recently introduced iterative delay-chain discharge architecture, showing the circuit inner operating principles and the correspondent design trade-offs. A complete design case, implemented in a commercial 180 nm CMOS process, operating at 0.9 V supply for a 0–250 pF input capacitance range, is presented. The circuit, tested by means of detailed electrical simulations, shows ultra-low energy consumption (≤1.884 nJ/conversion), excellent linearity (linearity error 15.26 ppm), good robustness against process and temperature corners (conversion gain sensitivity to process corners variation of 114.0 ppm and maximum temperature sensitivity of 81.9 ppm/∘C in the −40 ∘C, +125 ∘C interval) and medium-low resolution of 10.3 effective number of bits, while using only 0.0192 mm2 of silicon area and employing 2.93 ms for a single conversion.