Silicon Molecular Beam Epitaxy
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GROWTH AND CHARACTERIZATION OF Si–Ge ATOMIC LAYER SUPERLATTICES

1989 ◽  
pp. 17-24
Author(s):  
J.-M. BARIBEAU ◽  
D.J. LOCKWOOD ◽  
M.W.C. DHARMA-WARDANA ◽  
N.L. ROWELL ◽  
J.P. MCCAFFREY
Keyword(s):  
Atomic Layer

DOPANT INCORPORATION KINETICS AND ABRUPT PROFILES DURING SILICON MOLECULAR BEAM EPITAXY

1989 ◽  
pp. 281-297
Author(s):  
J.-E. SUNDGREN ◽  
J. KNALL ◽  
W.-X. NI ◽  
M.-A. HASAN ◽  
L.C. MARKERT ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Dopant Incorporation

INTERACTION OF STRUCTURE WITH KINETICS IN Si(001) HOMOEPITAXY

1989 ◽  
pp. 221-227
Author(s):  
S. CLARKE ◽  
M.R. WILBY ◽  
D.D. VVEDENSKY ◽  
T. KAWAMURA

Ge SEGREGATION DURING MOLECULAR BEAM EPITAXIAL GROWTH OF Si1 − xGex/Si LAYERS

1989 ◽  
pp. 191-196
Author(s):  
D.J. GRAVESTEIJN ◽  
P.C. ZALM ◽  
G.F.A. VAN DE WALLE ◽  
C.J. VRIEZEMA ◽  
A.A. VAN GORKUM ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

CHEMICAL ORDERING AND BOUNDARY STRUCTURE IN CRYSTALLINE Si–Ge SUPERLATTICES

1989 ◽  
pp. 165-170
Author(s):  
E. MÜLLER ◽  
H.-U. NISSEN ◽  
M. OSPELT ◽  
H. VON KÄNEL ◽  
P. STADELMANN
Keyword(s):  
Boundary Structure ◽  
Chemical Ordering
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