HYDROGEN BONDS IN LITHIUM NIOBATE CRYSTALS OF DIFFERENT COMPOSITION

Методом ИК-спектроскопии в области валентных колебаний OH - групп выполнен анализ комплексных дефектов, обусловленных наличием в структуре кристалла водородных связей, в номинально чистых кристаллах ниобата лития конгруэнтного и стехиометрического состава с разным отношением Li / Nb, а также в кристаллах LiNbO: Zn(0,04 - 6,5 мол.% ZnO), легированных цинком в широком диапазоне концентраций, полученным по технологии прямого легирования расплава. Выявлено влияние легирующих примесей на концентрацию OH - групп, вид и локализацию комплексных дефектов в структуре кристалла. Показано, что изменение количества позиций атомов водорода в структуре кристалла LiNbO позволяет с достаточной точностью судить о соответствии его состава стехиометрическому или конгруэнтному составу. Для легированных кристаллов LiNbO : Zn(0,04 - 6,5 мол.% ZnO) получены данные, свидетельствующие об изменении при прохождении концентрационных порогов характера комплексообразования OH - групп с точечными дефектами катионной подрешетки. При этом, вследствие изменения механизма вхождения легирующего катиона в структуру кардинально изменяются свойства кристалла. Вклад в различие частот (и, соответственно, в значение квазиупругих постоянных связей OH -) в спектре конгруэнтного кристалла и легированных кристаллов может вносить также различие электроотрицательностей и ионных радиусов основных и легирующих катионов. An analysis of complex defects was carried out by IR-spectroscopy method in the area of OH - groups stretching vibrations. The defects are caused by hydrogen bonds present in the structure of nominally pure congruent lithium niobate crystals, crystals of stoichiometric composition with a different Li / Nb ratio, as well as in LiNbO: Zn(0,04 - 6,5 мол.% ZnO) crystals doped in a wide range of concentrations due to direct doping of the melt method. Dopants were determined to influence OH - groups concentration, type and localization of complex defects in the crystals structure. A change in the amount of hydrogen sites in the LiNbO crystals structure was shown to evaluate the composition either stoichiometric or congruent. The character of OH - groups complexing with cation sublattice point defects was shown to change when doped crystals LiNbO: Zn(0,04 - 6,5 мол.% ZnO) trespass concentration thresholds. Dopant incorporation mechanism changes at this drastically, thus crystal properties also change quite sharply. Frequencies (as well as quasi-elastic constants of OH - bonds) change in congruent and doped crystals due to a difference in electronegativities and ionic radii of the main and dopant cations.

Pyrochlore Compounds From Atomistic Simulations

Pyrochlore compounds (A2B2O7) have a large applicability in various branches of science and technology. These materials are considered for use as effective ionic conductors for solid state batteries or as matrices for immobilization of actinide elements, amongst many other applications. In this contribution we discuss the simulation-based effort made in the Institute of Energy and Climate Research at Forschungszentrum Jülich and partner institutions regarding reliable computation of properties of pyrochlore and defect fluorite compounds. In the scope of this contribution, we focus on the investigation of dopant incorporation, defect formation and anion migration, as well as understanding of order-disorder transitions in these compounds. We present new, accurate simulated data on incorporation of U, Np, Pu, Am and Cm actinide elements into pyrochlores, activation energies for oxygen migration and radiation damage-induced structural changes in these materials. All the discussed simulation results are combined with available experimental data to provide a reliable description of properties of investigated materials. We demonstrate that a synergy of computed and experimental data leads to a superior characterization of pyrochlores, which could not be easily achieved by either of these methods when applied separately.

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones. The carrier concentration of Te-doped GaAsSb NWs determined from UPS spectra are found to be consistent with the values obtained from simulated I–V characteristics. Thus, these surface analytical tools, XPS/UPS and C-AFM/SKPM, that do not require any sample preparation are found to be powerful characterization techniques to analyze the dopant incorporation and carrier density in homogeneously doped NWs.

Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors

Hydrogen (H) dopants’ role and active defects inside n-type metal oxide semiconductors (MOXs) are comprehensively studied via continuous H plasma treatment.