epitaxial layers
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2022 ◽  
Vol 138 ◽  
pp. 106312
Author(s):  
Yong Tian ◽  
Xiong Zhang ◽  
Aijie Fan ◽  
Yang Shen ◽  
Shuai Chen ◽  
...  
Keyword(s):  

Author(s):  
А.А. Лебедев ◽  
В.Ю. Давыдов ◽  
И.А. Елисеев ◽  
С.П. Лебедев ◽  
И.П. Никитина ◽  
...  

Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.


Author(s):  
Б.Р. Семягин ◽  
А.В. Колесников ◽  
М.А. Путято ◽  
В.В. Преображенский ◽  
Т.Б. Попова ◽  
...  

By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.


2022 ◽  
Vol 355 ◽  
pp. 03047
Author(s):  
Hailong Yu ◽  
Hanchao Gao ◽  
Wei Wang ◽  
Ben Ma ◽  
Zhijun Yin ◽  
...  

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).


Langmuir ◽  
2021 ◽  
Author(s):  
Josué Mena ◽  
Joan J. Carvajal ◽  
Vitaly Zubialevich ◽  
Peter J. Parbrook ◽  
Francesc Díaz ◽  
...  

2021 ◽  
Vol 104 (23) ◽  
Author(s):  
V. M. Litvyak ◽  
R. V. Cherbunin ◽  
V. K. Kalevich ◽  
A. I. Lihachev ◽  
A. V. Nashchekin ◽  
...  

Author(s):  
Alisha Nanwani ◽  
Ravindra Singh Pokharia ◽  
Jan Schmidt ◽  
H Joerg Osten ◽  
Suddhasatta Mahapatra

Abstract The role of post-growth cyclic annealing (PGCA) and subsequent regrowth, on the improvement of crystal quality and surface morphology of (111)-oriented Ge epitaxial layers, grown by low temperature (300 C) molecular beam epitaxy (MBE) on epi-Gd2O3/Si(111) substrates, is reported. We demonstrate that PGCA is efficient in suppressing rotational twins, reflection microtwins and stacking faults, the predominant planar defect types in Ge(111) epilayers. Continuing Ge growth after PGCA, both at low (300 C) and high (500 C) temperatures, does not degrade the crystal quality any further. By promoting adatom downclimb, PGCA is observed to also heal the surface morphology, which is further improved on Ge re-growth. These results are promising for development of high-quality Ge(111) epitaxial layers for photonic and electronic applications.


Author(s):  
E. L. Pankratov

Abstract In this paper, we analyze the nonstationary heat transfer during growth of epitaxial layers in epitaxy reactors from the gas phase. Based on this analysis, we formulate several recommendations on organization of heating of the growth zone for increasing homogeneity of epitaxial layers. We introduce an analytical approach for analysis of heat transfer during the growth of epitaxial layers from the gas phase. The approach gives a possibility to simultaneously take into account the nonlinearity of heat transfer, as well as changes of their parameters both in space and time.


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