29th International Reliability Physics Symposium
Latest Publications

TOTAL DOCUMENTS

106

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0879426802

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Can burn-in screen wearout mechanisms?: reliability modeling of defective subpopulations-a case study

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146025 ◽

2002 ◽

Author(s):

D.C. Trindade

Keyword(s):

Reliability Modeling

Download Full-text

Proof and quantification of dynamic effects in hot-carrier-induced degradation under pulsed operation conditions

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146002 ◽

2002 ◽

Cited By ~ 6

Author(s):

M. Brox ◽

W. Weber

Keyword(s):

Dynamic Effects ◽

Hot Carrier ◽

Operation Conditions

Download Full-text

Development of a burn-in time reduction algorithm using the principles of acceleration factors

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146026 ◽

2002 ◽

Cited By ~ 5

Author(s):

A. Suyko ◽

S. Sy

Keyword(s):

Reduction Algorithm ◽

Time Reduction

Download Full-text

Improved performance and reliability of MOSFETs with thin gate oxides grown at high temperature

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146035 ◽

2002 ◽

Cited By ~ 3

Author(s):

A.B. Joshi ◽

G.Q. Lo ◽

D.L. Kwong ◽

S. Lee

Keyword(s):

High Temperature ◽

Gate Oxides ◽

Improved Performance

Download Full-text

The role of focused ion beams in physical failure analysis (ICs)

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146007 ◽

2002 ◽

Author(s):

G.R. Matusiewicz ◽

S.J. Kirch ◽

V.J. Seeley

Keyword(s):

Failure Analysis ◽

Ion Beams ◽

Focused Ion Beams

Download Full-text

Proximity effects of 'unused' output buffers on ESD performance (CMOS)

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146038 ◽

2002 ◽

Author(s):

J.P. LeBlanc ◽

M.D. Chaine

Keyword(s):

Proximity Effects

Download Full-text

SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146028 ◽

2002 ◽

Cited By ~ 3

Author(s):

C.R. Crowell ◽

C.-C. Shih ◽

V.C. Tyree

Keyword(s):

Spatial Distribution ◽

Test Procedure ◽

Structure Design

Download Full-text

Applications of infrared microscopy for bond pad damage detection

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146004 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.K. Shell ◽

S. Golwalkar

Keyword(s):

Damage Detection ◽

Infrared Microscopy

Download Full-text

Oxide field and temperature dependences of gate oxide degradation by substrate hot electron injection

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.146034 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Nishida ◽

S.E. Thompson

Keyword(s):

Gate Oxide ◽

Electron Injection ◽

Hot Electron ◽

Oxide Degradation ◽

Hot Electron Injection ◽

Temperature Dependences

Download Full-text

Effects of line size on thermal stress in aluminum conductors

29th International Reliability Physics Symposium ◽

10.1109/relphy.1991.145991 ◽

2002 ◽

Cited By ~ 7

Author(s):

T. Hosoda ◽

H. Niwa ◽

H. Yagi ◽

H. Tsuchikawa

Keyword(s):

Thermal Stress

Download Full-text

29th International Reliability Physics SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Can burn-in screen wearout mechanisms?: reliability modeling of defective subpopulations-a case study

Proof and quantification of dynamic effects in hot-carrier-induced degradation under pulsed operation conditions

Development of a burn-in time reduction algorithm using the principles of acceleration factors

Improved performance and reliability of MOSFETs with thin gate oxides grown at high temperature

The role of focused ion beams in physical failure analysis (ICs)

Proximity effects of 'unused' output buffers on ESD performance (CMOS)

SWEAT structure design and test procedure criteria based upon TEARS characterization and spatial distribution of failures in iterated structures

Applications of infrared microscopy for bond pad damage detection

Oxide field and temperature dependences of gate oxide degradation by substrate hot electron injection

Effects of line size on thermal stress in aluminum conductors

29th International Reliability Physics Symposium
Latest Publications