gate oxides Latest Research Papers

Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3125284 ◽

2021 ◽

Vol 68 (12) ◽

pp. 6321-6329

Author(s):

Munetaka Noguchi ◽

Tomokatsu Watanabe ◽

Hiroshi Watanabe ◽

Koji Kita ◽

Naruhisa Miura

Keyword(s):

Comparative Study ◽

Hall Effect ◽

Inversion Layer ◽

Gate Oxides ◽

Phosphorus Doped

Ferroelectric gate oxides for negative capacitance transistors

MRS Bulletin ◽

10.1557/s43577-021-00208-y ◽

2021 ◽

Author(s):

Michael Hoffmann ◽

Sayeef Salahuddin

Keyword(s):

Negative Capacitance ◽

Gate Oxides

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Current Applied Physics ◽

10.1016/j.cap.2020.09.003 ◽

2020 ◽

Vol 20 (12) ◽

pp. 1386-1390

Author(s):

Jeong Hyun Moon ◽

In Ho Kang ◽

Hyoung Woo Kim ◽

Ogyun Seok ◽

Wook Bahng ◽

...

Keyword(s):

Nitric Oxide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Post Deposition Annealing ◽

Gate Oxides ◽

Pressure Chemical ◽

Post Deposition

Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC

Solid-State Electronics ◽

10.1016/j.sse.2020.107874 ◽

2020 ◽

Vol 171 ◽

pp. 107874

Author(s):

Peyush Pande ◽

Sima Dimitrijev ◽

Daniel Haasmann ◽

Hamid Amini Moghadam ◽

Mayank Chaturvedi ◽

...

Keyword(s):

Interface Traps ◽

Gate Oxides

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3011661 ◽

2020 ◽

Vol 67 (9) ◽

pp. 3722-3728

Author(s):

Jordan R. Nicholls ◽

Arnar M. Vidarsson ◽

Daniel Haasmann ◽

Einar O. Sveinbjornsson ◽

Sima Dimitrijev

Keyword(s):

Low Temperature ◽

Interface Trap ◽

Gate Oxides ◽

Mos Capacitors

Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

2020 12th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP) ◽

10.1109/csndsp49049.2020.9249531 ◽

2020 ◽

Author(s):

Ygor Fonseca ◽

Rafael Nobrega ◽

Ulysses Duarte ◽

Thiago R. Raddo ◽

Iyad Dayoub ◽

...

Keyword(s):

Mobile Systems ◽

Next Generation ◽

Gate Oxides ◽

High K

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

Physical Review Applied ◽

10.1103/physrevapplied.14.014034 ◽

2020 ◽

Vol 14 (1) ◽

Cited By ~ 1

Author(s):

Kenta Chokawa ◽

Tetsuo Narita ◽

Daigo Kikuta ◽

Koji Shiozaki ◽

Tetsu Kachi ◽

...

Keyword(s):

Oxygen Vacancy ◽

Mixed Oxide ◽

First Principles ◽

Deep Levels ◽

Power Devices ◽

Gate Oxides

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.635 ◽

2020 ◽

Vol 1004 ◽

pp. 635-641

Author(s):

Peyush Pande ◽

Sima Dimitrijev ◽

Daniel Haasmann ◽

Hamid Amini Moghadam ◽

Philip Tanner ◽

...

Keyword(s):

Nitric Oxide ◽

Comparative Analysis ◽

Direct Measurement ◽

Measurement Technique ◽

Measurement Method ◽

Gate Oxide ◽

Interface Traps ◽

Gate Oxides ◽

Mos Capacitors ◽

Direct Measurement Method

This paper presents a comparative analysis of the electrically active near-interface traps, energetically located above the bottom of conduction band. Two different samples of N-type SiC MOS capacitors were fabricated with gate oxides grown in (1) dry O2 (as-grown) and (2) dry O2 annealed in nitric oxide (nitride). Measurements performed by the direct measurement method revealed that the traps located further away from the SiO2/SiC interface are removed by nitridation. A spatially localized behaviour of NITs is observed only in the nitrided gate oxide but not in the as-grown gate oxide.

High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides

physica status solidi (a) ◽

10.1002/pssa.201900802 ◽

2020 ◽

Vol 217 (7) ◽

pp. 1900802 ◽

Cited By ~ 3

Author(s):

Shahab Mollah ◽

Kamal Hussain ◽

Richard Floyd ◽

Abdullah Mamun ◽

Mikhail Gaevski ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Semiconductor Heterostructure ◽

High K ◽

Heterostructure Field Effect Transistors ◽

High Temperature Operation

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

Applied Physics Express ◽

10.7567/1882-0786/ab658a ◽

2020 ◽

Vol 13 (2) ◽

pp. 026504 ◽

Cited By ~ 2

Author(s):

Daigo Kikuta ◽

Kenji Ito ◽

Tetsuo Narita ◽

Tetsu Kachi

Keyword(s):

Post Deposition Annealing ◽

Gate Oxides ◽

Mos Devices ◽

Post Deposition

gate oxides
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides

Ferroelectric gate oxides for negative capacitance transistors

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

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gate oxidesRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides

Ferroelectric gate oxides for negative capacitance transistors

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides

Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

gate oxides
Recently Published Documents