2009 IEEE International Conference on IC Design and Technology
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Published By IEEE

9781424429332

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The tunnel source MOSFET: A novel asymmetric device solution for ultra-low power applications

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166285 ◽

2009 ◽

Cited By ~ 4

Author(s):

N. Venkatagirish ◽

Ahmet Tura ◽

Ritesh Jhaveri ◽

Hsu-Yu Chang ◽

Jason Woo

Keyword(s):

Low Power ◽

Ultra Low Power ◽

Asymmetric Device

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One-transistor bistable-body tunnel SRAM

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166303 ◽

2009 ◽

Cited By ~ 5

Author(s):

Kamal Karda ◽

Jay Brockman ◽

Surajit Sutar ◽

Alan Seabaugh ◽

Joseph Nahas

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Systematic approach of FinFET based SRAM bitcell design for 32nm node and below

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166287 ◽

2009 ◽

Cited By ~ 3

Author(s):

S. C. Song ◽

M. Abu-Rahma ◽

B. M. Han ◽

L. Ge ◽

S. S. Yoon ◽

...

Keyword(s):

Systematic Approach

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A low-power and multi-mode design approach for reconfigurable MASH SDM

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166252 ◽

2009 ◽

Author(s):

Hsin-Liang Chen ◽

Jen-Shiun Chiang

Keyword(s):

Low Power ◽

Design Approach ◽

Mode Design ◽

Multi Mode

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A simple fast exact density calculation algorithm

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166268 ◽

2009 ◽

Author(s):

Hua Xiang ◽

Chris Chu ◽

Ruchir Puri

Keyword(s):

Calculation Algorithm ◽

Density Calculation ◽

Exact Density

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Timing analysis of dual-edge-triggered flip-flop based circuits with clock gating

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166265 ◽

2009 ◽

Author(s):

Chungki Oh ◽

Sangmin Kim ◽

Youngsoo Shin

Keyword(s):

Timing Analysis ◽

Clock Gating ◽

Flip Flop

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Statistical-aware designs for the nm era

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166297 ◽

2009 ◽

Cited By ~ 1

Author(s):

Rajiv Joshi ◽

Rouwaida Kanj

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High mobility III–V channel MOSFETs for post-Si CMOS applications

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166286 ◽

2009 ◽

Author(s):

Yanning Sun ◽

E. W. Kiewra ◽

J. P. De Souza ◽

S. J. Koester ◽

J. J. Bucchignano ◽

...

Keyword(s):

High Mobility

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Unified TDDB model for stacked high-k dielectrics

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166271 ◽

2009 ◽

Cited By ~ 4

Author(s):

Byoung Hun Lee

Keyword(s):

High K

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Soft error estimates for fabless companies

2009 IEEE International Conference on IC Design and Technology ◽

10.1109/icicdt.2009.5166279 ◽

2009 ◽

Cited By ~ 2

Author(s):

Anand Dixit ◽

Raymond Heald

Keyword(s):

Error Estimates ◽

Soft Error

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2009 IEEE International Conference on IC Design and TechnologyLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The tunnel source MOSFET: A novel asymmetric device solution for ultra-low power applications

One-transistor bistable-body tunnel SRAM

Systematic approach of FinFET based SRAM bitcell design for 32nm node and below

A low-power and multi-mode design approach for reconfigurable MASH SDM

A simple fast exact density calculation algorithm

Timing analysis of dual-edge-triggered flip-flop based circuits with clock gating

Statistical-aware designs for the nm era

High mobility III–V channel MOSFETs for post-Si CMOS applications

Unified TDDB model for stacked high-k dielectrics

Soft error estimates for fabless companies

2009 IEEE International Conference on IC Design and Technology
Latest Publications