Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
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206

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gallium arsenide (GaAs), hole traps (cross section not measured)

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_99 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Arsenide ◽

Cross Section

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gallium arsenide (GaAs), hole traps (directly measured cross sections)

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_98 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Arsenide ◽

Cross Sections

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gallium arsenide (GaAs), electron traps (directly measured carrier cross sections)

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_97 ◽

2005 ◽

pp. 1-3

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Keyword(s):

Gallium Arsenide ◽

Cross Sections ◽

Electron Traps

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gallium arsenide (GaAs), bound exciton transition energies

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_84 ◽

2005 ◽

pp. 1-2

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Keyword(s):

Gallium Arsenide ◽

Exciton Transition ◽

Transition Energies

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gallium arsenide (GaAs), vibrational modes of impurities and defects: irradiation defects

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_79 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Vibrational Modes ◽

Impurities And Defects

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gallium arsenide (GaAs), vibrational modes of impurities and defects: isolated impurities

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_75 ◽

2005 ◽

pp. 1-11

Author(s):

Keyword(s):

Gallium Arsenide ◽

Vibrational Modes ◽

Impurities And Defects

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gallium phosphide (GaP), nitrogen-related electron traps in GaP

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_51 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Phosphide ◽

Electron Traps

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silicon carbide (SiC), diffusion of impurities

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_5 ◽

2005 ◽

pp. 1-8

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Keyword(s):

Silicon Carbide ◽

Diffusion Of Impurities

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gallium phosphide (GaP), binding energies of donors

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_31 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Gallium Phosphide ◽

Binding Energies

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gallium phosphide (GaP), solubility and diffusion of impurities

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10860305_25 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Phosphide ◽

And Diffusion ◽

Diffusion Of Impurities

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Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed MatterLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer-Verlag

gallium arsenide (GaAs), hole traps (cross section not measured)

gallium arsenide (GaAs), hole traps (directly measured cross sections)

gallium arsenide (GaAs), electron traps (directly measured carrier cross sections)

gallium arsenide (GaAs), bound exciton transition energies

gallium arsenide (GaAs), vibrational modes of impurities and defects: irradiation defects

gallium arsenide (GaAs), vibrational modes of impurities and defects: isolated impurities

gallium phosphide (GaP), nitrogen-related electron traps in GaP

silicon carbide (SiC), diffusion of impurities

gallium phosphide (GaP), binding energies of donors

gallium phosphide (GaP), solubility and diffusion of impurities

Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
Latest Publications