IEEE International Electron Devices Meeting 2003
Latest Publications

TOTAL DOCUMENTS

232

(FIVE YEARS 0)

H-INDEX

27

(FIVE YEARS 0)

Published By IEEE

0780378725

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Integrated sensor and electronics processing for <10^8 "iMEMS" inertial measurement unit components

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269435 ◽

2004 ◽

Author(s):

S. Lewis ◽

S. Alie ◽

T. Brosnihan ◽

C. Core ◽

T. Core ◽

...

Keyword(s):

Inertial Measurement Unit ◽

Measurement Unit ◽

Integrated Sensor ◽

Inertial Measurement

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Requirements and strategies for semiconductor technologies for mobile communication terminals

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269155 ◽

2004 ◽

Author(s):

K. Tachikawa

Keyword(s):

Mobile Communication

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Scaled 2bit/cell SONOS type nonvolatile memory technology for sub-90nm embedded application using SiN sidewall trapping structure

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269426 ◽

2004 ◽

Author(s):

M. Fukuda ◽

T. Nakanishi ◽

Y. Nara

Keyword(s):

Nonvolatile Memory ◽

Embedded Application

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Atomistic 3D process/device simulation considering gate line-edge roughness and poly-Si random crystal orientation effects [MOSFETs]

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269263 ◽

2004 ◽

Author(s):

M. Hane ◽

T. Ikezawa ◽

T. Ezaki

Keyword(s):

Crystal Orientation ◽

Device Simulation ◽

Line Edge Roughness ◽

Orientation Effects ◽

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A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269293 ◽

2004 ◽

Author(s):

S. Mahapatra ◽

P.B. Kumar ◽

M.A. Alam

Keyword(s):

Temperature Instability ◽

Bias Temperature Instability ◽

Thin Gate Oxide

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High frequency InAs-channel HEMTs for low power ICs

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269385 ◽

2004 ◽

Author(s):

Y. Royter ◽

K.R. Elliott ◽

P.W. Deelman ◽

R.D. Rajavel ◽

D.H. Chow ◽

...

Keyword(s):

Low Power ◽

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Substrate transfer: enabling technology for RF applications

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269301 ◽

2004 ◽

Author(s):

R. Dekker ◽

K. Dessein ◽

J.-H. Fock ◽

A. Gakis ◽

C. Jonville ◽

...

Keyword(s):

Enabling Technology ◽

Rf Applications ◽

Substrate Transfer

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A novel leakage current separation technique in a direct tunneling regime gate oxide SONOS memory cell

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269357 ◽

2004 ◽

Author(s):

S.S. Chung ◽

P.-Y. Chiang ◽

G. Chou ◽

C.-T. Huang ◽

P. Chen ◽

...

Keyword(s):

Leakage Current ◽

Memory Cell ◽

Separation Technique ◽

Direct Tunneling

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New approaches to improve the endurance of TiN/HfO/sub 2//TiN capacitor during the back-end process for 70nm DRAM device

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269367 ◽

2004 ◽

Author(s):

Jae Hyoung Choi ◽

Jeong-Hee Chung ◽

Se-Hoon Oh ◽

Jeong Sik Choi ◽

Cha-Young Yoo ◽

...

Keyword(s):

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How far will silicon nanocrystals push the scaling limits of NVMs technologies?

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269352 ◽

2004 ◽

Author(s):

B. De Salvo ◽

C. Gerardi ◽

S. Lombardo ◽

T. Baron ◽

L. Perniola ◽

...

Keyword(s):

Silicon Nanocrystals ◽

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