2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)
Latest Publications

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Published By IEEE

1424410975, 1424410983

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289784 ◽

2007 ◽

Author(s):

Lina Huang ◽

Bingjun Qu ◽

Litian Liu

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics ◽

Memory Applications

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A cost-Efficient Implementation of Public-key Cryptography on Embedded Systems

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289808 ◽

2007 ◽

Author(s):

Long Wang ◽

Hui Zhao ◽

Guoqiang Bai

Keyword(s):

Embedded Systems ◽

Public Key Cryptography ◽

Efficient Implementation ◽

Public Key ◽

Cost Efficient

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Gate Direct Tunneling Currents in Uniaxial Stressed MOSFETs

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289799 ◽

2007 ◽

Cited By ~ 3

Author(s):

Xiaodong Yang ◽

Younsung Choi ◽

Toshikazu Nishida ◽

Scott E Thompson

Keyword(s):

Direct Tunneling ◽

Tunneling Currents

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Study of charge trapping/detrapping mechanism in SiO2/HfO2 stack gate dielectrics considering two-way detrapping

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289792 ◽

2007 ◽

Author(s):

K. M. Farhan Shahil ◽

Md. Nayeem Arafat ◽

Q. D. M. Khosru ◽

M. Rezwan Khan

Keyword(s):

Gate Dielectrics ◽

Charge Trapping

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The Incremental Frequency Charge Pumping Method: Extending the CMOS Ultra-Thin Gate Oxide Measurement Down to 1nm

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289775 ◽

2007 ◽

Author(s):

Steve S. Chung

Keyword(s):

Gate Oxide ◽

Charge Pumping ◽

Thin Gate Oxide

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A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289812 ◽

2007 ◽

Author(s):

Beiju Huang ◽

XuZhang ◽

Haijun Liu ◽

Jinbin Liu ◽

Xiaoguang Dai ◽

...

Keyword(s):

Optical Communication ◽

Photo Receiver

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Threshold-Voltage Modeling of Bulk FinFETs by Considering Charge-Sharing and Surface Potential

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289770 ◽

2007 ◽

Author(s):

Jong-Ho Lee ◽

Byung-Kil Choi

Keyword(s):

Surface Potential ◽

Threshold Voltage ◽

Charge Sharing

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An Elliptic Curve Cryptography Coprocessor over GF(2m) on a Low-Cost Embedded System

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289807 ◽

2007 ◽

Author(s):

Hui Zhao ◽

Long Wang ◽

Guo-Qiang Bai

Keyword(s):

Embedded System ◽

Elliptic Curve ◽

Elliptic Curve Cryptography ◽

Low Cost

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High Level Synthesis Based on Fuzzy Theory with Evolutionary Technique

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289815 ◽

2007 ◽

Author(s):

Li Haijun ◽

Zhou Tao ◽

Sun Qiang ◽

Ma Guangsheng

Keyword(s):

Fuzzy Theory ◽

High Level Synthesis ◽

Evolutionary Technique ◽

High Level

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New High Voltage SJ-LDMOS with Non-uniform N-buried Layer

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST) ◽

10.1109/edst.2007.4289780 ◽

2007 ◽

Cited By ~ 1

Author(s):

Wanjun Chen ◽

Bo Zhang ◽

Zhaoji Li

Keyword(s):

High Voltage ◽

Buried Layer

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2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Resistive switching characteristics of epitaxial La0.67Sr0.33MnO3 films for nonvolatile memory applications

A cost-Efficient Implementation of Public-key Cryptography on Embedded Systems

Gate Direct Tunneling Currents in Uniaxial Stressed MOSFETs

Study of charge trapping/detrapping mechanism in SiO2/HfO2 stack gate dielectrics considering two-way detrapping

The Incremental Frequency Charge Pumping Method: Extending the CMOS Ultra-Thin Gate Oxide Measurement Down to 1nm

A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

Threshold-Voltage Modeling of Bulk FinFETs by Considering Charge-Sharing and Surface Potential

An Elliptic Curve Cryptography Coprocessor over GF(2m) on a Low-Cost Embedded System

High Level Synthesis Based on Fuzzy Theory with Evolutionary Technique

New High Voltage SJ-LDMOS with Non-uniform N-buried Layer

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)
Latest Publications