Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

An Appropriate Diffusion Process Changes the Behaviour of a Planar-Nothing on Insulator Device

The paper investigates the tunneling currents through the gate terminals of the last MOSFET production and proposes a related structure, noted as p-NOI (planar-Nothing On Insulator) device. In fact, the p-NOI structure can arise as parasitic device in any MOSFET having a gate insulator sub-10nm thickness or can be separately produced to offer a tunneling device. The work principle of a p-NOI structure consists in the Fowler-Nordheim's tunneling of a thin insulator. Its architecture is derived from the Nothing On Insulator (NOI) device, using oxide instead vacuum. Essentially, the p-NOI current follows a metal-insulator-semiconductor trajectory. A critical issue is the field effect of a transistor that must be fulfilled by independent p-NOI device. In this purpose, a diffusion process seems to be the key. A planar p-NOI device with top three terminals is proposed. A diffusion process along to the Si-surface is a key technological step that offers distinct current traces.