2018 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications

TOTAL DOCUMENTS

179

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781538654798

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Accelerated BTI degradation under stochastic TDDB effect

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353616 ◽

2018 ◽

Cited By ~ 3

Author(s):

Devyani Patra ◽

Ahmed Kamal Reza ◽

Mehdi Katoozi ◽

Ethan H. Cannon ◽

Kaushik Roy ◽

...

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Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353595 ◽

2018 ◽

Cited By ~ 1

Author(s):

Bhawani Shankar ◽

Ankit Soni ◽

Sayak Dutta Gupta ◽

Mayank Shrivastava

Keyword(s):

Safe Operating

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Effect of HCI degradation on the variability of MOSFETS

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353684 ◽

2018 ◽

Cited By ~ 3

Author(s):

C. Zhou ◽

K. A. Jenkins ◽

P.I. Chuang ◽

C. Vezyrtzis

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Reliability studies of SiC vertical power MOSFETs

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353544 ◽

2018 ◽

Cited By ~ 11

Author(s):

Daniel J. Lichtenwalner ◽

Brett Hull ◽

Edward Van Brunt ◽

Shadi Sabri ◽

Donald A. Gajewski ◽

...

Keyword(s):

Power Mosfets

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Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353601 ◽

2018 ◽

Cited By ~ 1

Author(s):

J. Franco ◽

B. Kaczer ◽

A. Chasin ◽

E. Bury ◽

D. Linten

Keyword(s):

Hot Electron

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Polysilicon resistor stability under voltage stress for safe-operating area characterization

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353686 ◽

2018 ◽

Cited By ~ 1

Author(s):

C. Kendrick ◽

M. Cook ◽

J.P. Gambino ◽

T. Myers ◽

J. Slezak ◽

...

Keyword(s):

Voltage Stress ◽

Safe Operating

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Key attributes to achieving > 99.99 satellite availability

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353620 ◽

2018 ◽

Cited By ~ 1

Author(s):

Brian Kosinski ◽

Ken Dodson

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Method to assess the impact of LER and spacing variation on BEOL dielectric reliability using 2D-field simulations for <20nm spacing

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353670 ◽

2018 ◽

Author(s):

D. Kocaay ◽

Ph. Roussel ◽

K. Croes ◽

I. Ciofi ◽

A. Lesniewska ◽

...

Keyword(s):

Spacing Variation ◽

The Impact

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Understanding gate metal work function (mWF) impact on device reliability — A holistic approach

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353646 ◽

2018 ◽

Cited By ~ 4

Author(s):

P. Srinivasan ◽

R. Ranjan ◽

S. Cimino ◽

A. Zainuddin ◽

B. Kannan ◽

...

Keyword(s):

Work Function ◽

Holistic Approach ◽

Metal Work Function ◽

Device Reliability ◽

Metal Work

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Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2018.8353570 ◽

2018 ◽

Author(s):

Younggeun Ji ◽

Jeonghoon Kim ◽

Jungin Kim ◽

Miji Lee ◽

Jaeheon Noh ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor

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2018 IEEE International Reliability Physics Symposium (IRPS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Accelerated BTI degradation under stochastic TDDB effect

Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs

Effect of HCI degradation on the variability of MOSFETS

Reliability studies of SiC vertical power MOSFETs

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

Polysilicon resistor stability under voltage stress for safe-operating area characterization

Key attributes to achieving > 99.99 satellite availability

Method to assess the impact of LER and spacing variation on BEOL dielectric reliability using 2D-field simulations for <20nm spacing

Understanding gate metal work function (mWF) impact on device reliability — A holistic approach

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 IEEE International Reliability Physics Symposium (IRPS)
Latest Publications