2018 IEEE International Reliability Physics Symposium (IRPS)
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179
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9
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Published By IEEE

9781538654798
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Accelerated BTI degradation under stochastic TDDB effect

2018 ◽  
Author(s):  
Devyani Patra ◽  
Ahmed Kamal Reza ◽  
Mehdi Katoozi ◽  
Ethan H. Cannon ◽  
Kaushik Roy ◽  
...  

Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs

2018 ◽  
Author(s):  
Bhawani Shankar ◽  
Ankit Soni ◽  
Sayak Dutta Gupta ◽  
Mayank Shrivastava
Keyword(s):  
Safe Operating

Effect of HCI degradation on the variability of MOSFETS

2018 ◽  
Author(s):  
C. Zhou ◽  
K. A. Jenkins ◽  
P.I. Chuang ◽  
C. Vezyrtzis

Reliability studies of SiC vertical power MOSFETs

2018 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Brett Hull ◽  
Edward Van Brunt ◽  
Shadi Sabri ◽  
Donald A. Gajewski ◽  
...  
Keyword(s):  
Power Mosfets

Polysilicon resistor stability under voltage stress for safe-operating area characterization

2018 ◽  
Author(s):  
C. Kendrick ◽  
M. Cook ◽  
J.P. Gambino ◽  
T. Myers ◽  
J. Slezak ◽  
...  
Keyword(s):  
Voltage Stress ◽  
Safe Operating

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 ◽  
Author(s):  
Younggeun Ji ◽  
Jeonghoon Kim ◽  
Jungin Kim ◽  
Miji Lee ◽  
Jaeheon Noh ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor
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