2009 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

231

(FIVE YEARS 0)

H-INDEX

34

(FIVE YEARS 0)

Published By IEEE

9781424456390

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

First autonomous wireless sensor node powered by a vacuum-packaged piezoelectric MEMS energy harvester

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424300 ◽

2009 ◽

Author(s):

R. Elfrink ◽

V. Pop ◽

D. Hohlfeld ◽

T. M. Kamel ◽

S. Matova ◽

...

Keyword(s):

Sensor Node ◽

Energy Harvester ◽

Wireless Sensor ◽

Wireless Sensor Node ◽

Piezoelectric Mems

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Self-consistent Monte Carlo device simulations under nano-scale device structures: role of Coulomb interaction, degeneracy, and boundary condition

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424417 ◽

2009 ◽

Author(s):

Kohei Nakanishi ◽

Tadayoshi Uechi ◽

Nobuyuki Sano

Keyword(s):

Boundary Condition ◽

Monte Carlo ◽

Coulomb Interaction ◽

Device Structures ◽

Self Consistent

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One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424259 ◽

2009 ◽

Author(s):

Seong-Wan Ryu ◽

Jin-Woo Han ◽

Dong-Il Moon ◽

Yang-Kyu Choi

Keyword(s):

Silicon Nanowire

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Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424287 ◽

2009 ◽

Author(s):

M. Tada ◽

T. Sakamoto ◽

Y. Tsuji ◽

N. Banno ◽

Y. Saito ◽

...

Keyword(s):

Low Power ◽

Solid Electrolyte ◽

Reconfigurable Logic ◽

Crossbar Switch

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Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424306 ◽

2009 ◽

Author(s):

F.-J. Ma ◽

S. C. Rustagi ◽

H. Zhao ◽

G. S. Samudra ◽

N. Singh ◽

...

Keyword(s):

Silicon Nanowire

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A 25-nm gate-length FinFET transistor module for 32nm node

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424367 ◽

2009 ◽

Author(s):

Chang-Yun Chang ◽

Tsung-Lin Lee ◽

Clement Wann ◽

Li-Shyue Lai ◽

Hung-Ming Chen ◽

...

Keyword(s):

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Novel T-channel nanowire FET with built-in signal amplification for pH sensing

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424288 ◽

2009 ◽

Author(s):

Kyeong-Sik Shin ◽

Kyunghoon Lee ◽

Ji Yoon Kang ◽

Chi On Chui

Keyword(s):

Signal Amplification ◽

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Printed organic transistors: Toward ambient electronics

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424430 ◽

2009 ◽

Author(s):

Takao Someya ◽

Tsuyoshi Sekitani ◽

Makoto Takamiya ◽

Takayasu Sakurai ◽

Ute Zschieschang ◽

...

Keyword(s):

Organic Transistors

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Ultra thinning 300-mm wafer down to 7-µm for 3D wafer Integration on 45-nm node CMOS using strained silicon and Cu/Low-k interconnects

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424349 ◽

2009 ◽

Author(s):

Y. S. Kim ◽

A. Tsukune ◽

N. Maeda ◽

H. Kitada ◽

A. Kawai ◽

...

Keyword(s):

Strained Silicon ◽

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Effect of bottom electrode of ReRAM with Ta2O5/TiO2 stack on RTN and retention

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424226 ◽

2009 ◽

Author(s):

M. Terai ◽

Y. Sakotsubo ◽

Y. Saito ◽

S. Kotsuji ◽

H. Hada

Keyword(s):

Bottom Electrode

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