Nitride Semiconductor Devices: Principles and Simulation
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Published By Wiley-VCH Verlag Gmbh & Co. Kgaa

9783527610723, 9783527406678

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Visible Light-Emitting Diodes

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch14 ◽

2007 ◽

pp. 303-325 ◽

Author(s):

Sergey Yu. Karpov

Keyword(s):

Visible Light ◽

Light Emitting Diodes ◽

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Front Matter

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.fmatter ◽

2007 ◽

pp. I-XXI

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Index

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.index ◽

2007 ◽

pp. 493-496

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AlGaN/GaN High Electron Mobility Transistors

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch10 ◽

2007 ◽

pp. 211-233 ◽

Author(s):

Tomás Palacios ◽

Umesh K. Mishra

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Optical Properties of Edge-Emitting Lasers: Measurement and Simulation

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch18 ◽

2007 ◽

pp. 405-422 ◽

Author(s):

Ulrich T. Schwarz ◽

Bernd Witzigmann

Keyword(s):

Optical Properties ◽

Emitting Lasers

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Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch17 ◽

2007 ◽

pp. 381-404

Author(s):

Gennady A. Smolyakov ◽

Marek Osiski

Keyword(s):

Mode Coupling ◽

Transverse Mode

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Introduction

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch1 ◽

2007 ◽

pp. 1-11

Author(s):

Joachim Piprek

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Electronic and Optical Properties of GaN-based Quantum Wells with (1010) Crystal Orientation

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch8 ◽

2007 ◽

pp. 169-190

Author(s):

Seoung-Hwan Park ◽

Shun-Lien Chuang

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Crystal Orientation ◽

Electronic And Optical Properties

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Interband Transitions in InGaN Quantum Wells

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch7 ◽

2007 ◽

pp. 145-167 ◽

Author(s):

Jörg Hader ◽

Jerome V. Moloney ◽

Angela Thrnhardt ◽

Stephan W. Koch

Keyword(s):

Quantum Wells ◽

Interband Transitions ◽

Ingan Quantum Wells

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Electron Bandstructure Parameters

Nitride Semiconductor Devices: Principles and Simulation ◽

10.1002/9783527610723.ch2 ◽

2007 ◽

pp. 13-48 ◽

Author(s):

Igor Vurgaftman ◽

Jerry R. Meyer

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