High-Performance InGaAs HEMTs on Si Substrates for RF Applications

In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (ID,max) of 569 mA/mm, and the maximum extrinsic transconductance (gm,max) of 1112 mS/mm. The current gain cutoff frequency (fT) is as high as 273 GHz and the maximum oscillation frequency (fMAX) reaches 290 GHz. To the best of our knowledge, the gm,max and the fT of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.

Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics

The wider bandgap AlGaN (Eg > 3.4 eV) channel-based high electron mobility transistors (HEMTs) are more effective for high voltage operation. High critical electric field and high saturation velocity are the major advantages of AlGaN channel HEMTs, which push the power electronics to a greater operating regime. In this article, we present the DC characteristics of 0.8 µm gate length (LG) and 1 µm gate-drain distance (LGD) AlGaN channel-based high electron mobility transistors (HEMTs) on ultra-wide bandgap β-Ga2O3 Substrate. The β-Ga2O3 substrate is cost-effective, available in large wafer size and has low lattice mismatch (0 to 2.4%) with AlGaN alloys compared to conventional SiC and Si substrates. A physics-based numerical simulation was performed to investigate the DC characteristics of the HEMTs. The proposed HEMT exhibits sheet charge density (ns) of 1.05 × 1013 cm−2, a peak on-state drain current (IDS) of 1.35 A/mm, DC transconductance (gm) of 277 mS/mm. The ultra-wide bandgap AlGaN channel HEMT on β-Ga2O3 substrate with conventional rectangular gate structure showed 244 V off-state breakdown voltage (VBR) and field plate gate device showed 350 V. The AlGaN channel HEMTs on β-Ga2O3 substrate showed an excellent performance in ION/IOFF and VBR. The high performance of the proposed HEMTs on β-Ga2O3 substrate is suitable for future portable power converters, automotive, and avionics applications.

Recent Advances in Doped Bi2O3 and its Photocatalytic Activity: A Review

Bismuth Oxide (Bi2O3) has a very promising photocatalytic ability to degrade waste pollutants under visible light irradiation because it has a small energy gap of around 2.85-2.58 eV. Although it has excellent potential as a photocatalyst, Bi2O3 has the disadvantage of a high electron-hole pair recombination rate, which will reduce its photocatalytic activity. To overcome these problems, surface modifications, defect recognition, or doping of Bi2O3 are carried out to obtain a more effective and efficient photocatalyst to degrade waste pollutants under visible light irradiation. Several studies by researchers have been described for the modification of Bi2O3 by doping. Various types of doping are given, such as doping in elements or doping in the form of compounds to form composites. Based on several studies that have been described, appropriate doping has been shown to increase the photocatalytic activity of Bi2O3. Keywords: Bi2O3, Photocatalyst, Doping

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

Improved device performance of recessed-gate AlGaN/GaN HEMTs using by in-situ N2O radical treatment

In this work, the N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10-9 A/mm, high on/off current ratio of 108, and high fT×Lg of 13.44 GHz·μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.

Decoupling of dust cloud and embedding plasma for high electron depletion in nanodusty plasmas

In recent years nanoparticles (nps) have become key technological products, e.g. as coatings with tunable optical gap in third generation solar cells, as nanocrystals for photonic applications, and as pharmaceutical nanocarriers. In particle sources, that use reactive, nanodusty plasmas, a high dust density changes the properties of the dusty plasma compared to a dust free plasma considerably, as the electron depletion leads to a reduced number of free electrons. This is called the Havnes effect and was central for the understanding of the famous spokes in Saturns rings. We see here, that it is also important for technological applications. Using self excited dust density waves (DDW) as a diagnostic tool, it is possible for the first time, to completely characterize an argon discharge with embedded amorphous hydrocarbon nps of different size and density. The results show, that electron depletion governs the charge of dust grains, while the size of the particles has only a weak influence. The ion density and electric potential profile are almost independent of both, dust size as well as dust density. This suggests, that the rf generated plasma and the dust cloud coexist and coupling of both is weak.

Multiparameter-controlled laser ionization within a plasma wave for wakefield acceleration

We present an optical setup for well-defined ionization inside a plasma such that precisely controlled spots of high electron density can be generated. We propose to use the setup for Trojan Horse Injection (or Plasma Photocathode Emission) where a collinear laser beam is needed to release electrons inside a plasma wakefield. The reflection-based setup allows a suitable manipulation of the laser near field without disturbing the spectral phase of the laser pulses. A required ionization state and volume can be reached by tuning the beam size, pulse duration and pulse energy. The ionization simulations enable a prediction of the ionization spot and are in good agreement with dedicated experiments which measured the number of electrons created during the laser-gas interaction.

Diamond/GaN HEMTs: Where from and Where To?

Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. On the search of effective thermal management solutions, the integration of GaN and synthetic diamond with high thermal conductivity and electric breakdown strength shows a tremendous potential. A significant effort has been made in the past few years by both academic and industrial players in the search of a technological process that allows the integration of both materials and the fabrication of high performance and high reliability hybrid devices. Different approaches have been proposed, such as the development of diamond/GaN wafers for further device fabrication or the capping of passivated GaN devices with diamond films. This paper describes in detail the potential and technical challenges of each approach and presents and discusses their advantages and disadvantages.