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Gallium Nitride Materials and Devices XVI
Latest Publications
TOTAL DOCUMENTS
71
(FIVE YEARS 71)
H-INDEX
0
(FIVE YEARS 0)
Published By SPIE
9781510642072, 9781510642089
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Latest Documents
Most Cited Documents
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Front Matter: Volume 11686
Gallium Nitride Materials and Devices XVI
◽
10.1117/12.2596734
◽
2021
◽
Keyword(s):
Matter Volume
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New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate
Gallium Nitride Materials and Devices XVI
◽
10.1117/12.2584814
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2021
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Author(s):
Takeshi Kamikawa
◽
Srinivas Gandrothula
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Hongjian Li
◽
Valeria Bonito-Olivia
◽
Feng Wu
◽
...
Keyword(s):
Laser Diode
◽
Epitaxial Lateral Overgrowth
◽
Fabrication Method
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Free Standing
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Lateral Overgrowth
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Development of AlGaN/GaN heterostructures for e-beam pumped UV lasers
Gallium Nitride Materials and Devices XVI
◽
10.1117/12.2578370
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2021
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Author(s):
Sergi Cuesta Arcos
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Quang Minh Thai
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Yoann Curé
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Fabrice Donatini
◽
Edith Bellet-Amalric
◽
...
Keyword(s):
Uv Lasers
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Device fabrication for multiple quantum shell nanowires based laser diodes
Gallium Nitride Materials and Devices XVI
◽
10.1117/12.2578128
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2021
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Author(s):
Renji Okuda
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Weifang Lu
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Naoki Sone
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Yoshiya Miyamoto
◽
Kazuma Ito
◽
...
Keyword(s):
Laser Diodes
◽
Device Fabrication
◽
Multiple Quantum
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Shell Nanowires
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Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping
Gallium Nitride Materials and Devices XVI
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10.1117/12.2584794
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2021
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Author(s):
Tomoyuki Tanikawa
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Mayuko Tsukakoshi
◽
Masahiro Uemukai
◽
Ryuji Katayama
Keyword(s):
Multiphoton Excitation
◽
Nondestructive Characterization
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Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities
Gallium Nitride Materials and Devices XVI
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10.1117/12.2585300
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2021
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Author(s):
Ryuji Katayama
◽
Masahiro Uemukai
◽
Tomoyuki Tanikawa
Keyword(s):
Wavelength Converters
◽
Nitride Semiconductors
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Band structures and heterojunction alignment of ScAlN alloy
Gallium Nitride Materials and Devices XVI
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10.1117/12.2579138
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2021
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Author(s):
Hanlin Fu
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Justin C. Goodrich
◽
Nelson Tansu
Keyword(s):
Band Structures
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Band alignment of ScxAl1-xN/GaN heterojunctions
Gallium Nitride Materials and Devices XVI
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10.1117/12.2579042
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2021
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Author(s):
Eric N. Jin
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Matthew T. Hardy
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Alyssa L. Mock
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John L. Lyons
◽
Alan R. Kramer
◽
...
Keyword(s):
Band Alignment
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Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction
Gallium Nitride Materials and Devices XVI
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10.1117/12.2578133
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2021
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Author(s):
Yoshiya Miyamoto
◽
Naoki Sone
◽
Weifang Lu
◽
Kazuma Ito
◽
Renji Okuda
◽
...
Keyword(s):
Crystal Growth
◽
Tunnel Junction
◽
Multiple Quantum
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Light Emitter
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Highly conductive ammonothermal GaN substrates with controlled concentration of gallium vacancies
Gallium Nitride Materials and Devices XVI
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10.1117/12.2577017
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2021
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Author(s):
Piotr Jaroszynski
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Karolina Grabianska
◽
Michal Fijalkowski
◽
Mikolaj Amilusik
◽
Marcin Zajac
◽
...
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