GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)
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Novel low-cost process for 0.1-μm T-shaped gate of InGaP/InGaAs pseudomorphic hemt

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803749 ◽

2005 ◽

Author(s):

M. Sugiura ◽

K. Morizuka

Keyword(s):

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77 GHz fully-MMIC automotive forward-looking radar [using pHEMTs]

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803760 ◽

2003 ◽

Author(s):

H. Kondoh ◽

K. Sekine ◽

S. Takatani ◽

K. Takano ◽

H. Kuroda ◽

...

Keyword(s):

77 Ghz ◽

Forward Looking

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A highly integrated MMIC chipset for a 40 GHz MVDS transceiver subscriber terminal

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803738 ◽

2003 ◽

Author(s):

C. Dourlens ◽

A.M. Couturier ◽

R. Sevin ◽

P. Quentin ◽

D. Pons

Keyword(s):

Subscriber Terminal

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Bias point dependence of the hot electron degradation of AlGaAs/GaAs power HFETs

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803752 ◽

2003 ◽

Author(s):

R. Menozzi ◽

D. Dieci ◽

M. Messori ◽

G. Sozzi ◽

C. Lanzieri ◽

...

Keyword(s):

Hot Electron ◽

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Millimeter-wave monolithic GaAs IC interconnect and packaging technology trends in Japan

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803737 ◽

2003 ◽

Author(s):

K. Ohata

Keyword(s):

Millimeter Wave ◽

Packaging Technology ◽

Technology Trends

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A GaAs +3V low noise integrated downconverter for C-band applications [using MESFETs]

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803757 ◽

2003 ◽

Author(s):

C. Trantanella ◽

P. Blount ◽

M. Shifrin

Keyword(s):

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94/47 GHz regenerative frequency divider MMIC with low conversion loss

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803765 ◽

2003 ◽

Author(s):

S. Kudszus ◽

W.H. Haydl ◽

M. Neumann ◽

A. Hulsmann

Keyword(s):

Frequency Divider ◽

Conversion Loss

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A <25% PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFET technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803732 ◽

2003 ◽

Author(s):

K. Krishnamurthy ◽

M.J.W. Rodwell ◽

S.I. Long

Keyword(s):

Power Amplifier

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Status and roadmap of GaAs technology in Georgia, former Soviet Union

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803721 ◽

2003 ◽

Author(s):

N.P. Khuchua ◽

A.B. Gerasimov ◽

R.I. Chikovani ◽

Z.D. Chakhnakia ◽

L.V. Khvedelidze ◽

...

Keyword(s):

Soviet Union ◽

Former Soviet Union

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Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369) ◽

10.1109/gaas.1999.803743 ◽

2003 ◽

Author(s):

T. Sasaki ◽

Y. Takada ◽

Y. Tanabe ◽

T. Nitta ◽

Y. Kakiuchi ◽

...

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