2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
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9781479954285, 9781479954278, 9781479954261

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Spin lifetime in strained silicon films

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874695 ◽

2014 ◽

Author(s):

Viktor Sverdlov ◽

Dmitri Osintsev ◽

Siegfried Selberherr

Keyword(s):

Silicon Films ◽

Strained Silicon ◽

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High electron mobility n-channel Ge MOSFETs with sub-nm EOT

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874697 ◽

2014 ◽

Author(s):

Akira Toriumi ◽

Choong Hyun Lee ◽

Cimang Lu ◽

Tomonori Nishimura

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility

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Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874641 ◽

2014 ◽

Author(s):

Yiheng Lin ◽

Hiroshi Yasuda ◽

Howard Ho ◽

Manfred Schiekofer ◽

Bernhard Benna ◽

...

Keyword(s):

Phosphorus Diffusion ◽

Diffusion Mechanisms ◽

Thermal Nitridation

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Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874654 ◽

2014 ◽

Author(s):

David Patchett ◽

Maksym Myronov ◽

Stephen Rhead ◽

John Halpin ◽

David Leadley

Keyword(s):

Epitaxial Growth ◽

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Novel Si-Ge-C superlattices and their applications

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874692 ◽

2014 ◽

Author(s):

Carlos J. R. P. Augusto ◽

Lynn Forester

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Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874628 ◽

2014 ◽

Author(s):

Maksym Myronov ◽

Christopher Morrison ◽

John Halpin ◽

Stephen Rhead ◽

Jamie Foronda ◽

...

Keyword(s):

Low Temperature ◽

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Lattice-engineered Si1−xGex-buffer on Si(001) for GaP integration

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874630 ◽

2014 ◽

Author(s):

Oliver Skibitzki ◽

Agnieszka Paszuk ◽

Fariba Hatami ◽

Peter Zaumseil ◽

Yuji Yamamoto ◽

...

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RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874653 ◽

2014 ◽

Author(s):

M. Myronov ◽

S. D. Rhead ◽

G. Colston ◽

D. R. Leadley

Keyword(s):

Carbon Content ◽

High Carbon ◽

High Carbon Content ◽

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Ge n+/p junctions using temperature-based phosphorous implantation

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874651 ◽

2014 ◽

Author(s):

P. Bhatt ◽

P. Swarnkar ◽

A. Misra ◽

J. Biswas ◽

S. Lodha

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Silicon photonics

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2014.6874661 ◽

2014 ◽

Author(s):

G T Reed ◽

G Z Mashanovich ◽

F Y Gardes ◽

D J Thomson ◽

Y Hu ◽

...

Keyword(s):

Silicon Photonics

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