Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

2022 ◽  
pp. 2101323
Author(s):  
Sungmun Song ◽  
Woori Ham ◽  
Gyuil Park ◽  
Wonwoo Kho ◽  
Jisoo Kim ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Neuromorphic Computing

Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

2020 ◽  
Vol 12 (50) ◽  
pp. 56300-56309
Author(s):  
Yihao Yang ◽  
Zhongnan Xi ◽  
Yuehang Dong ◽  
Chunyan Zheng ◽  
Haihua Hu ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Neuromorphic Computing ◽  
Spin Filtering

scholarly journals Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

2020 ◽  
Vol 2 (12) ◽  
pp. 4023-4033
Author(s):  
Benjamin Max ◽  
Michael Hoffmann ◽  
Halid Mulaosmanovic ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick
Keyword(s):  
Double Layer ◽  
Tunnel Junctions ◽  
Neuromorphic Computing

scholarly journals Spin‐Torque Memristors: Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing (Adv. Sci. 10/2021)

2021 ◽  
Vol 8 (10) ◽  
pp. 2170056
Author(s):  
Xueying Zhang ◽  
Wenlong Cai ◽  
Mengxing Wang ◽  
Biao Pan ◽  
Kaihua Cao ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Torque ◽  
Neuromorphic Computing

scholarly journals Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

2021 ◽  
pp. 2004645
Author(s):  
Xueying Zhang ◽  
Wenlong Cai ◽  
Mengxing Wang ◽  
Biao Pan ◽  
Kaihua Cao ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Torque ◽  
Neuromorphic Computing

scholarly journals Ultrafast Switching and Linear Conductance Modulation in Ferroelectric Tunnel Junctions via P(VDF-TrFE) Morphology Control

Nanoscale ◽  
2021 ◽  
Author(s):  
Sayani Majumdar
Keyword(s):  
Energy Range ◽  
Tunnel Junctions ◽  
Morphology Control ◽  
Electronic Components ◽  
Neuromorphic Computing ◽  
Non Volatile Memory ◽  
Ultrafast Switching ◽  
Volatile Memory ◽  
Conductance Modulation ◽  
Linear Conductance

Neuromorphic computing architectures demand development of analog, non-volatile memory components operating at femto-Joule/bit operation energy. Electronic components working at this energy range require devices operating at ultrafast timescales. Among different...

Tantalum superconducting tunnel junctions for photon counting detectors

2002 ◽  
Vol 12 (3) ◽  
pp. 145-148
Author(s):  
C. Jorel ◽  
P. Feautrier ◽  
J.-C. Villégier ◽  
A. Benoit
Keyword(s):  
Tunnel Junctions ◽  
Photon Counting ◽  
Superconducting Tunnel Junctions ◽  
Photon Counting Detectors

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance

Microfabrication and Magnetoelectric Properties of High-magnetoresistance Tunnel Junctions.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 707-710
Author(s):  
X. F. Han ◽  
M. Oogane ◽  
T. Daibou ◽  
K. Yaoita ◽  
Y. Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetoelectric Properties
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