Spin-Filtering Ferroelectric Tunnel Junctions as Multiferroic Synapses for Neuromorphic Computing

2020 ◽  
Vol 12 (50) ◽  
pp. 56300-56309
Author(s):  
Yihao Yang ◽  
Zhongnan Xi ◽  
Yuehang Dong ◽  
Chunyan Zheng ◽  
Haihua Hu ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Neuromorphic Computing ◽  
Spin Filtering

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

Spin filtering effects in monocristalline Fe/MgO/Fe magnetic tunnel junctions

2006 ◽  
Vol 126 (2-3) ◽  
pp. 112-119 ◽  
Author(s):  
C. Tiusan ◽  
J. Faure-Vincent ◽  
M. Sicot ◽  
M. Hehn ◽  
C. Bellouard ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Filtering

Highly Stable Artificial Synapses Based on Ferroelectric Tunnel Junctions for Neuromorphic Computing Applications

2022 ◽  
pp. 2101323
Author(s):  
Sungmun Song ◽  
Woori Ham ◽  
Gyuil Park ◽  
Wonwoo Kho ◽  
Jisoo Kim ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Neuromorphic Computing

scholarly journals Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

2019 ◽  
Vol 122 (3) ◽  
Author(s):  
J. Tornos ◽  
F. Gallego ◽  
S. Valencia ◽  
Y. H. Liu ◽  
V. Rouco ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Spin Filtering

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Graphene Nanoribbons ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Spintronic Devices ◽  
Zigzag Graphene Nanoribbons ◽  
Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

Spin Transport in Spin Filtering Magnetic Tunneling Junctions

2007 ◽  
Vol 7 (11) ◽  
pp. 4143-4145 ◽  
Author(s):  
Yun Li ◽  
Eok Kyun Lee
Keyword(s):  
Spin Transport ◽  
Tunnel Junctions ◽  
Recursive Algorithm ◽  
Real Space ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling ◽  
Spin Filtering

Taking into account spin-orbit coupling and s–d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Perfect Spin Filtering Effect on Fe3GeTe2-Based Van der Waals Magnetic Tunnel Junctions

2020 ◽  
Vol 124 (50) ◽  
pp. 27429-27435
Author(s):  
Lishu Zhang ◽  
Tao Li ◽  
Jie Li ◽  
Yanyan Jiang ◽  
Jiaren Yuan ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Filtering Effect ◽  
Spin Filtering

Bias dependence of tunnel magnetoresistance in spin filtering tunnel junctions: Experiment and theory

2007 ◽  
Vol 76 (13) ◽  
Author(s):  
U. Lüders ◽  
M. Bibes ◽  
S. Fusil ◽  
K. Bouzehouane ◽  
E. Jacquet ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Tunnel Magnetoresistance ◽  
Spin Filtering

scholarly journals Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

2020 ◽  
Vol 2 (12) ◽  
pp. 4023-4033
Author(s):  
Benjamin Max ◽  
Michael Hoffmann ◽  
Halid Mulaosmanovic ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick
Keyword(s):  
Double Layer ◽  
Tunnel Junctions ◽  
Neuromorphic Computing
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