ChemInform Abstract: Optically-Detected Magnetic Resonance of Donor States in Aluminum Gallium Arsenide AlxGa1-xAs (x ≥ 0.35) Doped with Group-IV and Group-VI Impurities

ChemInform ◽  
2010 ◽  
Vol 23 (33) ◽  
pp. no-no
Author(s):  
E. R. GLASER ◽  
T. A. KENNEDY
Keyword(s):  
Gallium Arsenide ◽  
Magnetic Resonance ◽  
Aluminum Gallium Arsenide ◽  
Group Iv ◽  
Group Vi ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Donor States

Optically Detected Magnetic Resonance of Group IV and Group VI Donors in Al0.6Ga0.4As/GaAs Heterostructures

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Glaser ◽  
T.A. Kennedy ◽  
B. Molnar ◽  
M. Mizuta
Keyword(s):  
Magnetic Resonance ◽  
Chemical Shifts ◽  
Theoretical Work ◽  
Shallow Donor ◽  
Group Iv ◽  
Group Vi ◽  
Orbit Splitting ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Donor States

AbstractThe influence of chemically different donor species on the nature of shallow donor states in Al0.6Ga0.4As/GaAs heterostructures has been investigated by optically detected magnetic resonance (ODMR). Previous theoretical work by Morgan predicts a triplet state for group IV donors and a singlet state for group VI donors. ODMR experiments were performed on as-grown and implanted Si-, Se-, and S-doped epitaxial layers of Al0.6Ga0.4As grown on (001) GaAs substrates. The effective-mass states are modified by the heter-oepitaxial strain in these layers. The Si donors are characterized as quasi-independent valley states. The Se and S donors have valley-orbit splitting energies (i.e. chemical shifts) of 19-20 meV . The results indicate that Si, Se, and S donors are on the lattice sites in the metastable state of DX.

Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35

1991 ◽  
Vol 43 (18) ◽  
pp. 14540-14556 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
B. Molnar ◽  
R. S. Sillmon ◽  
M. G. Spencer ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Group Iv ◽  
Group Vi ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Observation of Persistent Electron Capture in N-Type Gallium Arsenide Studied by Optically Detected Magnetic Resonance

1997 ◽  
Vol 258-263 ◽  
pp. 1015-1020
Author(s):  
K. Krambrock ◽  
M.V.B. Pinheiro ◽  
K.H. Wietzke ◽  
Johann Martin Spaeth
Keyword(s):  
Gallium Arsenide ◽  
Magnetic Resonance ◽  
Electron Capture ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

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