Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35

1991 ◽  
Vol 43 (18) ◽  
pp. 14540-14556 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
B. Molnar ◽  
R. S. Sillmon ◽  
M. G. Spencer ◽  
...  

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Glaser ◽  
T.A. Kennedy ◽  
B. Molnar ◽  
M. Mizuta

AbstractThe influence of chemically different donor species on the nature of shallow donor states in Al0.6Ga0.4As/GaAs heterostructures has been investigated by optically detected magnetic resonance (ODMR). Previous theoretical work by Morgan predicts a triplet state for group IV donors and a singlet state for group VI donors. ODMR experiments were performed on as-grown and implanted Si-, Se-, and S-doped epitaxial layers of Al0.6Ga0.4As grown on (001) GaAs substrates. The effective-mass states are modified by the heter-oepitaxial strain in these layers. The Si donors are characterized as quasi-independent valley states. The Se and S donors have valley-orbit splitting energies (i.e. chemical shifts) of 19-20 meV . The results indicate that Si, Se, and S donors are on the lattice sites in the metastable state of DX.



1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.



1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke


1997 ◽  
Vol 6 (10) ◽  
pp. 1381-1384 ◽  
Author(s):  
N.T. Son ◽  
E. Sörman ◽  
W.M. Chen ◽  
C. Hallin ◽  
O. Kordina ◽  
...  


1992 ◽  
Vol 270 ◽  
Author(s):  
P. A. Lane ◽  
L. S. Swanson ◽  
Q.-X. Ni ◽  
J. Shinar ◽  
J Engel ◽  
...  

ABSTRACTThe photoluminescence (PL), X-band ODMR. and LESR of C60 films and C60 isolated in a toluene/polystyrene glass matrix (C60:T/PS) is described. The delocalized triplet LESR and ODMR of C60:T/PS are similar to previously reported LESR. In films, however, the ODMR indicates that the delocalized triplet is larger and distorted by neighboring molecules. In addition, another, localized triplet, and a narrow PL-enhancing line at g = 2.0017 ± 0.0005 are observed. These features are similar to those observed in several π-conjugated polymers. The former is attributed to a localized triplet of size similar to a 5- or 6-membered ring, tentatively on a face adjacent to another C60 molecule; the latter is believed to result from intermolecular polaron recombination.



Sign in / Sign up

Export Citation Format

Share Document